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Time-Resolved Raman Scattering and Transmission Measurements During Pulsed Laser Annealing

Published online by Cambridge University Press:  15 February 2011

A. Compaan ,
H. W. LO ,
A. Aydinli  and
M. C. Lee
A. Compaan
Affiliation:
Department of Physics, Kansas State University, Manhattan, Kansas, 66506
H. W. LO
Affiliation:
Department of Physics, Kansas State University, Manhattan, Kansas, 66506
A. Aydinli
Affiliation:
Department of Physics, Kansas State University, Manhattan, Kansas, 66506
M. C. Lee
Affiliation:
Department of Physics, Kansas State University, Manhattan, Kansas, 66506
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Abstract

Raman Scattering from a 7 nsec pulsed dye laser has been used to determine the onset of recrystallization following an 8 nsec dye laser excitation pulse in ion-implanted silicon. We find essentially complete recrystallization 59 nsec after the first excitation pulse and from Stokes-anti-Stokes ratios we find at 59 nsec a crystalline lattice temperature of 600 ± 200° C. Time-resolved transmission measurements at λ = 1.15 µm also demonstrate that no molten phase has occurred even though the usual reflectivity enhancement is observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 15
Copyright
Copyright © Materials Research Society 1981

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References

REFERENCES

1. Khaibullin, I. B., Shtyrkov, B. I., Zaripov, M. M., Bayazitov, R. M. and Galjautdinov, M. F., Radiation Effects 36, 225 (1978).Google Scholar
2. Baeri, P., Campisano, S. U., Foti, G. and Rimini, E., Appl. Phys. Lett. 32, 137 (1978);Google Scholar
2a Baeri, P., Campisano, S. U., Foti, G. and Rimini, E., Phys. Rev. Lett. 41, 1246 (1978);Google Scholar
2b Wang, J. C., Wood, R. F. and Pronko, P. R., Appl. Phys. Lett. 33, 455 (1978);Google Scholar
2c Wood, R. F., Appl. Phys. Lett. 37, 302 (1980);Google Scholar
2d Baeri, P., Campisano, S. U., Foti, G. and Rimini, E., J. Appl. Phys. 50, 788 (1979);Google Scholar
2e Meyer, J. R., Bartoli, F. J. and Kruer, M. R., Phys. Rev. B 21, 1559 (1980).Google Scholar
3. Van Vechten, J. A., Tsu, R., Saris, F. W. and Hoonhout, D., Phys. Lett. 74a, 417 (1979);Google Scholar
3a Van Vechten, J. A., Tsu, R. and Saris, F. W., Phys. Lett. 74a, 422 (1979);Google Scholar
3b Van Vechten, J. A., J. de Phys. 41 C–15 (1980)Google Scholar
3c(Proceedings of the Mons Conference on Laser-Induced Nucleation in Solids, Mons, Belgium4–6Oct 1979.)Google Scholar
4. Auston, D. H., Surko, C. M., Venkatesan, T. N. C., Slusher, R. E. and Golovchenko, J. A., Appl. Phys. Lett. 33, 437 (1978).Google Scholar
5. Surko, C. M., Simons, A. L., Auston, D. H., Golovchenko, J. A., Slusher, R. E. and Venkatesan, T. N. C., Appl. Phys. Lett. 34, 635 (1979);Google Scholar
5a Auston, D. H., Golovchenko, J. A., Simons, A. L., Surko, C. M. and Venkatesan, T. N. C., Appl. Phys. Lett. 34, 363 (1979);Google Scholar
5b Lin, Y. S. and Wang, K. L., Appl. Phys. Lett. 34, 363 (1979);Google Scholar
5c Murakami, K., Kawabe, M., Gamo, K., Namba, S. and Aoyagi, Y., Phys. Lett. 70A, 332 (1979).Google Scholar
6. Lo, H. W. and Compaan, A., Appl. Phys. Lett. (to be published).Google Scholar
7. Lo, H. W. and Compaan, A., Phys. Rev. Lett. 44, 1604 (1980).Google Scholar
8. Johnson, W. S. and Gibbons, J. F., Projected Range Statistics in Semiconductors (Standford U. P., Standford, 1969).Google Scholar
9. We are grateful to M. Gibson for performing the TEM studies.Google Scholar
10. Gauster, W. B. and Bushnell, J. C., J. Appl. Phys. 41, 3850 (1970);Google Scholar
10a Woerdman, J. P., Philips Res. Repts. Suppl. 7 (1971) p 1.Google Scholar
11. Nathan, M. I, Hodgson, R. T. and Yoffa, E. J., Appl. Phys. Lett. 36, 512 (1980).Google Scholar
12. Dumke, W. P., Phys. Lett. 78A, 477 (1980).Google Scholar
13. Schmid, W., Sol. St. Electron. 21, 1285 (1978).Google Scholar
14. Van Vechten, J. A. and Wautelet, M., Proc. llth Int'l Conf. Defects and Radiation Effects in Semicond. (Oiso, Japan, Sept. 8–11, 1980) Inst. Phys. Conf. Ser. (to be published).Google Scholar