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Time-Resolved Optical Studies of Amorphous CoSi Thin-Film Crystallization

Published online by Cambridge University Press:  25 February 2011

M. Libera ,
T. Kim ,
K. Siangchaew ,
L. Clevenger  and
Q. Hong
M. Libera
Affiliation:
Stevens Institute of Technology, Hoboken, NJ 07030
T. Kim
Affiliation:
Stevens Institute of Technology, Hoboken, NJ 07030
K. Siangchaew
Affiliation:
Stevens Institute of Technology, Hoboken, NJ 07030
L. Clevenger
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
Q. Hong
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

Time-resolved reflection and transmission measurements during heating are coupled with transmission electron microscopy (TEM) to study the crystallization of amorphous 75nm Co49Si51 films. The reflection decreases and the transmission increases upon crystallization. Optical data are converted to a measure of the fraction crystallized, χ=χ(T,t). A Kissinger analysis gives an activation energy for crystallization of 1.1 eV. TEM analysis of films crystallized in-situ show they are principally CoSi2 with a small amount of CoSi2. These results are being used for kinetic modelling of crystallization of amorphous Co-silicide films for potential use in Si mosfet and bipolar technologies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 715
Copyright
Copyright © Materials Research Society 1993

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References

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