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Time-of-Flight Measurements in a-Si:H Between Room Temperature and 130° C°

Published online by Cambridge University Press:  26 February 2011

D. S. Shen ,
S. Aljishi ,
Z E. Smith ,
J. P. Conde ,
V. Chu  and
S. Wagner
D. S. Shen
Affiliation:
Princeton University, Department of Electrical Engineering, Princeton, NJ 08544
S. Aljishi
Affiliation:
Princeton University, Department of Electrical Engineering, Princeton, NJ 08544
Z E. Smith
Affiliation:
Princeton University, Department of Electrical Engineering, Princeton, NJ 08544
J. P. Conde
Affiliation:
Princeton University, Department of Electrical Engineering, Princeton, NJ 08544
V. Chu
Affiliation:
Princeton University, Department of Electrical Engineering, Princeton, NJ 08544
S. Wagner
Affiliation:
Princeton University, Department of Electrical Engineering, Princeton, NJ 08544
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Abstract

The drift mobility μd and the mobility-lifetime product μτ in undoped a-Si:H have been studied up to 130°C. The electron μde is temperature-activated with Eae = 0.13 to 0.16 eV. The electron (μτ)e increases with temperature T. For hole transport, we observe the transition from dispersive to non-dispersive transport with increasing T. The hole μdh is ∼ 1/100 of μde, and is activated with Eah = 0.34 to 0.48eV. The hole (μτ)h does not change much with T. A computer simulation demonstrates the high sensitivity of μd to the band tail width.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 95
Copyright
Copyright © Materials Research Society 1987

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