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Time-of-Flight Characterization of Single-crystalline CVD Diamond with Different Surface Passivation Layers

Published online by Cambridge University Press:  22 March 2011

Kiran Kumar Kovi ,
Saman Majdi ,
Markus Gabrysch ,
Ian Friel ,
Richard Balmer  and
Jan Isberg
Kiran Kumar Kovi
Affiliation:
Division of Electricity, Department of Engineering Sciences, Uppsala University, Box 531, Uppsala, Sweden.
Saman Majdi
Affiliation:
Division of Electricity, Department of Engineering Sciences, Uppsala University, Box 531, Uppsala, Sweden.
Markus Gabrysch
Affiliation:
Division of Electricity, Department of Engineering Sciences, Uppsala University, Box 531, Uppsala, Sweden.
Ian Friel
Affiliation:
Element Six Ltd., Kings Ride Park, Ascot, Berkshire SL5 8BP, United Kingdom
Richard Balmer
Affiliation:
Element Six Ltd., Kings Ride Park, Ascot, Berkshire SL5 8BP, United Kingdom
Jan Isberg
Affiliation:
Division of Electricity, Department of Engineering Sciences, Uppsala University, Box 531, Uppsala, Sweden.
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Abstract

The electronic properties of diamond, e.g. a high band-gap and high carrier mobilities, together with material properties such as a very high thermal conductivity, chemical inertness and a high radiation resistance makes diamond a unique material for many extreme electronic applications out of reach for silicon devices. This includes, e.g. microwave power devices, power devices and high temperature electronics. It is important to have an effective passivation of the surface of such devices since the passivation determines the ability of the device to withstand high surface electric fields. In addition, the passivation is used to control the surface charge which can strongly influence the electric field in the bulk of the device. It is possible to measure sample parameters such as electron and hole drift mobilities, charge carrier lifetimes or saturation velocities using Time-of-flight (ToF) method. The ToF technique has also been adapted for probing the electric field distribution and the distribution of trapped charge. In this paper we present new data from lateral ToF studies of high-purity single crystalline diamond with different surface passivations. Silicon oxide and silicon nitride are used as passivation layers in the current study. The effect of the passivation on charge transport is studied, and the results of different passivation materials are compared experimentally.

Keywords

diamondpassivationchemical vapor deposition (CVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1282: Symposium A – Diamond Electronics and Bioelectronics—Fundamentals to Applications IV , 2011 , mrsf10-1282-a09-01
Copyright
Copyright © Materials Research Society 2011

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References

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