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Time Resolved Photoluminescence of Cubic Mg Doped GaN

Published online by Cambridge University Press:  10 February 2011

R. Seitz ,
C. Gaspar ,
T. Monteiro ,
E. Pereira ,
B. Schoettker ,
T. Frey ,
D. J. As ,
D. Schikora  and
K. Lischka
R. Seitz
Affiliation:
University of Aveiro, Department of Physics, Aveiro, PORTUGAL, [email protected]
C. Gaspar
Affiliation:
University of Aveiro, Department of Physics, Aveiro, PORTUGAL, [email protected]
T. Monteiro
Affiliation:
University of Paderborn, Fachbereich Physik, Paderborn, Germany
E. Pereira
Affiliation:
University of Paderborn, Fachbereich Physik, Paderborn, Germany
B. Schoettker
Affiliation:
University of Aveiro, Department of Physics, Aveiro, PORTUGAL, [email protected]
T. Frey
Affiliation:
University of Aveiro, Department of Physics, Aveiro, PORTUGAL, [email protected]
D. J. As
Affiliation:
University of Aveiro, Department of Physics, Aveiro, PORTUGAL, [email protected]
D. Schikora
Affiliation:
University of Aveiro, Department of Physics, Aveiro, PORTUGAL, [email protected]
K. Lischka
Affiliation:
University of Paderborn, Fachbereich Physik, Paderborn, Germany
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Abstract

Mg doped cubic GaN layers were studied by steady state and time resolved photoluminescence. The blue emission due to Mg doping can be decomposed in three bands. The decay curves and the spectral shift with time delays indicates donor-acceptor pair behaviour. This can be confirmed by excitation density dependent measurements. Furthermore temperature dependent analysis shows that the three emissions have one impurity in common. We propose that this is an acceptor level related to the Mg incorporation and the three deep donor levels are due to compensation effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 225
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1. Orton, J W, Semicond. Sci. Techonol. 10, 101(1995).10.1088/0268-1242/10/1/017Google Scholar
2. As, D.J., Simonsmeier, T., Schöttker, B., Frey, T., Schikora, D., Kriegseis, W., Burkhardt, W., Meyer, B.K., Appl. Phys. Lett. 73, 1835(1998)10.1063/1.122298Google Scholar
3. Schikora, D., Hankeln, M., As, D.J., Lischka, K., Litz, T., Waag, A., Buhrow, T., and Henneberger, F., Phys. Rev. B54, R8381 (1996)10.1103/PhysRevB.54.R8381Google Scholar
4. Thomas, D., Hopfield, J., Augustyniak, W., Phys. Rev. 140 (IA), A202 (1965)10.1103/PhysRev.140.A202Google Scholar
5. Dean, P., Progress in Solid State Chem. 8, I (1973)10.1016/0079-6786(73)90004-6Google Scholar
6. Schmidt, T., Lischka, K., Zulehner, W., Phys. Rev. B45, 8989(1992)10.1103/PhysRevB.45.8989Google Scholar
7. Rarnirez-Flores, G., Navarro-Contreras, H., Lastras-Martfnez, A., Powell, R.C., and Greene, J.E., Phys. Rev. B50, 8433(1994)10.1103/PhysRevB.50.8433Google Scholar
8. Kaufimnann, U., Kunzer, M., Obloh, H., Maier, M., Manz, Ch., Ramakrishnan, A., Santic, B., Phys. Rev. B 59, 5561(1999)10.1103/PhysRevB.59.5561Google Scholar
9. Brandt, O., Group III Nitride Semiconductor Compounds - Physics and Application, II, 417–459, edited by B., Gil, Oxford Science Publications, Clarendon Press, Oxford (1998)Google Scholar
10. Eckey, L., Gfug, U., Hoist, J., Hoffmann, A., Schineller, B., Heime, K., Heuken, M., Schon, O., Beccard, R., J. Crys. Growth 189/190, 523 (1998)10.1016/S0022-0248(98)00344-3Google Scholar
11. As, D. J., Phys. Stat. Sol. (b) 210, 445(1998)10.1002/(SICI)1521-3951(199812)210:2<445::AID-PSSB445>3.0.CO;2-P3.0.CO;2-P>Google Scholar