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Time Dependence of the Reverse Current in Amorphous Silicon Schottky Diodes

Published online by Cambridge University Press:  15 February 2011

K. Aflatooni ,
R. Hornsey  and
A. Nathan
K. Aflatooni
Affiliation:
Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
R. Hornsey
Affiliation:
Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
A. Nathan
Affiliation:
Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
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Abstract

We present measurement results of the time-dependent reverse current in amorphous silicon Schottky diodes for a broad range of bias voltage stress conditions. The resultant behavior can be divided into three regimes, depending on the bias. At low biases, the reverse current exhibits a power-law dependence attributable to dispersive electron transport. In the medium bias regime, the current shows a dramatic increase which may be due to enhanced thermionic emission and tunneling of electrons across the barrier, enabled by hole transport to the metal-semiconductor interface. At high biases, the effects of prolonged stress were found to be irreversible. Here, an eventual decrease in reverse current was observed, with an associated loss of rectifying characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 925
Copyright
Copyright © Materials Research Society 1997

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References

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