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Time Decay Characteristics of the Yb3+- Related 0.98 μm Emissions in Porous Silicon

Published online by Cambridge University Press:  10 February 2011

Tadamasa Kimura ,
Yasuhiro Nishida ,
Tohru Dejima ,
Riichiro Saito  and
Hideo Isshiki
Tadamasa Kimura
Affiliation:
Dept of Electronic Engineering, Univ. Electro-Communications, Tokyo 182–8585, JAPAN, [email protected]
Yasuhiro Nishida
Affiliation:
Dept of Electronic Engineering, Univ. Electro-Communications, Tokyo 182–8585, JAPAN, [email protected]
Tohru Dejima
Affiliation:
Dept of Electronic Engineering, Univ. Electro-Communications, Tokyo 182–8585, JAPAN, [email protected]
Riichiro Saito
Affiliation:
Dept of Electronic Engineering, Univ. Electro-Communications, Tokyo 182–8585, JAPAN, [email protected]
Hideo Isshiki
Affiliation:
Dept of Electronic Engineering, Univ. Electro-Communications, Tokyo 182–8585, JAPAN, [email protected]
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Abstract

Enhanced emissions at 0.98 μm of Yb3+ ions (2F5/2 → 2F7/2) incorporated in porous silicon are obtained when the host porous silicon is pre-annealed in an O2 containing atmosphere. Time decay characteristics are measured for the Yb 3+-related 0.98 μm emissions as well as for the emissions of these host porous silicon between 20 K and 300 K. The decay of the Yb3+ peak at 20 K is characterized with a fast (˜ 30 μs) and a slow decay time (≤ ˜ 400 μs), whereas it is fitted with one slow decay time (˜ 390 μs) at 300 K. The results are explained in terms of two optical centers: one has a fast fluorescent lifetime with a large temperature quenching, and the other has a slow fluorescent lifetime which is nearly constant between 20 K and 300 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 486: Symposium H – Materials & Devices for Silicon Based Optoelectronics , 1997 , 293
Copyright
Copyright © Materials Research Society 1998

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References

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