Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-25T18:27:01.387Z Has data issue: false hasContentIssue false
  • English
  • Français

Ti-Interlayer Mediated Epitaxy of CoSi2 with Ti Capping

Published online by Cambridge University Press:  15 February 2011

R. T. Tung  and
F. Schrey
R. T. Tung
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, N.J. 07974
F. Schrey
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, N.J. 07974
Get access

Abstract

The growth of CoSi2 layers on Si(100) by Ti-interlayer mediated epitaxy (TIME) was studied. The use of a thin (1–3nm) Ti cap, the choice of an appropriate interlayer, and the removal of a metastable reaction by-product were found important for the fabrication of uniform CoSi2 layers. High quality, pinhole-free, single crystal [100]-oriented CoSi2 layers were fabricated. Multiply-oriented formation on heavily arsenic doped Si, void formation near oxide edges, and other salicide-related issues are also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 173
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Tung, R. T., Gibson, J. M., Jacobson, D. C., and Poate, J. M., Appl. Phys. Lett. 43, 476 (1983).Google Scholar
2. Jimenez, J. R., Hsiung, L. M., Rajan, K., Schowalter, L. J., Hashimoto, S., Thompson, R. D., and Iyer, S. S., Appl. Phys. Lett. 57, 2811 (1990).Google Scholar
3. White, A. E., Short, K. T., Dynes, R. C., Garno, J. P., and Gibson, J. M., Appl. Phys. Lett. 50, 95 (1987).Google Scholar
4. Dass, M. L. A., Fraser, D. B. and Wei, C. -S., Appl. Phys. Lett. 58, 1308 (1991).Google Scholar
5. Ishizaka, A. and Shiraki, Y., J. Electrochem. Soc. 133, 666 (1986).Google Scholar
6. Ogawa, S., Fair, J. A., Dass, M. L. A., Jones, E. C., Kouzaki, T., Cheung, N. W., and Fraser, D. B., Ext. Abs. SSDM'93, p. 195 (1993).Google Scholar
7. Tung, R. T. and Schrey, F., Appl. Phys. Lett. 67, 2164 (1995).Google Scholar
8. Hsia, S. L., Tan, T. Y., Smith, P., and McGuire, G. E., J. Appl. Phys. 70, 1864 (1992); ibidi 72, 1864 (1992).Google Scholar