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Threshold Character of Zn Diffusion into InP

Published online by Cambridge University Press:  10 February 2011

A.V. Kamanin ,
Yu.A. Kudryavtsev  and
N.M. Shmidt
A.V. Kamanin
Affiliation:
Ioffe Physico-Technical Institute, St.Petersburg, Russia
Yu.A. Kudryavtsev
Affiliation:
Ioffe Physico-Technical Institute, St.Petersburg, Russia
N.M. Shmidt
Affiliation:
Ioffe Physico-Technical Institute, St.Petersburg, Russia
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Abstract

The initial diffusion stage (lIDS) of Zn in InP from polymer spin-on films has been investigated. The threshold diffusion temperature of 375°C has been established. It has been found that the heavily-doped near-surface layer, that consisted of electrically neutral zinc-containing complexes, was formed at IDS, while a low part of Zn was electrically active. The Zn diffusivity during IDS has been found to be at least two orders of magnitude more than the Zn diffusivity obtained after an isothermal diffusion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 527: Symposium Z – Diffusion Mechanisms in Crystalline Materials , 1998 , 413
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

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