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Thin-Film Transistors on PET at 100°C

Published online by Cambridge University Press:  01 February 2011

J.P. Conde ,
P. Alpuim  and
V. Chu
J.P. Conde
Affiliation:
Departament of Materials Engineering, Instituto Superior Técnico, Av. Rovisco Pais, 1049-001 Lisbon, Portugal
P. Alpuim
Affiliation:
Departament of Materials Engineering, Instituto Superior Técnico, Av. Rovisco Pais, 1049-001 Lisbon, Portugal INESC Microsystems and Nanotechnologies, Rua Alves Redol 9, 1000-029 Lisbon, Portugal
V. Chu
Affiliation:
INESC Microsystems and Nanotechnologies, Rua Alves Redol 9, 1000-029 Lisbon, Portugal
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Abstract

Bottom-gate amorphous silicon thin-film transistors were fabricated on a polyethylene terephthalate substrate. The maximum processing temperature was 100°C. The transistor characteristics are comparable, although still inferior, to those of standard amorphous silicon transistors fabricated on glass substrates. To obtain these characteristics, an extended anneal the processing temperature was required. The devices were fabricated using separately optimized low-temperature active layer, contact layer and gate dielectric layer. To achieve good electronic properties for these layers, hydrogen dilution was required.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A3.1
Copyright
Copyright © Materials Research Society 2002

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