No CrossRef data available.
Article contents
Thin-Film Gd4 Bi3 Grown on a Glass Substrate
Published online by Cambridge University Press: 21 February 2011
Abstract
Sputtered thin-films of Gd-Bi (4:3 in atomic ratio) were annealed in vacuum under various annealing conditions. The samples annealed at a temperature near 530°C and 4 hours contained 40% of poly-crystalline Gd4Bi3 phase, which is of the anti-Th3P4 structure. The main peak in the x-ray diffraction spectrum due to Gd4Bi3 is of (310). The phase of Gd4Bi3 was not found for a lower annealing temperature; for a higher annealing temperature (above 550°C), this phase could not be observed, because other phases or structures were beginning to grow, e. g. Gd5Bi3 and/or GdBi phases.
The Curie temperature of the Gd4Bi3 thin-films was estimated to be about 330 K; this value is nearly the same as that of bulk Gd4Bi3. The residual resistance of the Gd4Bi3 thin-films was several times as large as that of bulk Gd4Bi3 poly-crystal.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1989