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Thin-Film Encapsulants for Thermal Processing of GaAs

Published online by Cambridge University Press:  26 February 2011

J.M. Molarius ,
E. Kolawa ,
K. Morishitaal ,
E.T-S. Pan ,
J.L. Tandon  and
M-A. Nicolet
E. Kolawa
Affiliation:
California Institute of Technology, Pasadena, CA 91125
K. Morishitaal
Affiliation:
California Institute of Technology, Pasadena, CA 91125
E.T-S. Pan
Affiliation:
California Institute of Technology, Pasadena, CA 91125
J.L. Tandon
Affiliation:
McDonnell Douglas Astronautics Co., Huntington Beach, CA 92647
M-A. Nicolet
Affiliation:
California Institute of Technology, Pasadena, CA 91125
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Abstract

During heat treatment of GaAs there is a tendency for arsenic to evaporate. This process can have deleterious consequences and must be controlled during the annealing of GaAs by using encapsulants. In this work we use a Cr collector to catch the evaporated atoms. This collector is placed on top of GaAs or GaAs/cap during annealing. We survey the effectiveness of W, Hf and HfN as capping materials for thermal annealings of 10 min. for 450–700 C and compare them to Si3N4. The backscattering spectrometry results show that Si3N4 and W were excellent caps up to 700 C for 10 min. No evaporation was defected through HfN either, but hillock formation was detected on the surface. Hf failed because of its chemical reaction with GaAs at 650 C, 10 min.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 525
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Haynes, T.E., Chu, W.R. and Picraux, S.T., Appl. Phys. Lett. 50, 1071 (1987).Google Scholar
2. Barcz, A.J., IEEE EDL-8, 200 (1987).Google Scholar
3. Zeng, X.-F., Chung, D.D.L. and Lakhanf, A., Solid State Electronics 30, 1259 (1987).Google Scholar
4. Bensalem, R., Abid, A. and Sealy, B.J., Thin Solid Films 143, 141 (1986).Google Scholar
5. Nogami, T., Nagaoka, M. and Lida, N., IEEE Transactions on Electron Devices 35, 1989 (1988).Google Scholar
6. Pan, E.T-S., Venezia, A., Kolawa, E., Molarius, J.M. and Nicolet, M-A., Thin Solid Films (in press).Google Scholar
7. Asai, K., Sugahara, H., Matsuoka, Y. and Tokumitsu, M., J. Vac. Sci. Technol. B 6, 1526 (1988).Google Scholar
8. Haynes, T.E., Chu, W.K., Aselage, T.L. and Picraux, S.T., Appl. Phys. Lett. 49, 666 (1986).CrossRefGoogle Scholar
9. Haynes, T.E., Picraux, S.T. and Chu, W.K. in Beam-Solid Interactions and Transient Processes, edited by Thompson, M.D., S.T., Picraux and J.S., Williams (Mat. Res. Soc. Proc. 74, Pittsburgh, PA 1987) pp. 693–698.Google Scholar
10. So, F.C.T., Kolawa, E., Tandon, J. and Nicolet, M-A., Journal of the Electrochemical Society 134, 1755 (1987).Google Scholar
11. Schmid-Fetzer, R., Journal of Electronic Materials 17, 193 (1988).CrossRefGoogle Scholar
12. Handbook of Refractory Compounds, IFI Plenum 1980.Google Scholar
13. Rare Metal Handbook, Reinhold Pub. Corp. 1961.Google Scholar
14. Blakemore, J.S., J. Appl. Phys. 53, R123 (1982).Google Scholar