Hostname: page-component-745bb68f8f-d8cs5 Total loading time: 0 Render date: 2025-02-05T14:42:49.376Z Has data issue: false hasContentIssue false
  • English
  • Français

Thin Film WSe2 for Use as a Photovoltaic Absorber Material

Published online by Cambridge University Press:  28 July 2014

Qinglei Ma ,
Hrachya Kyureghian ,
Joel D. Banninga  and
N. J. Ianno
Qinglei Ma
Affiliation:
Department of Electrical Engineering, University of Nebraska, 209N WSEC Lincoln, NE 68588-0511
Hrachya Kyureghian
Affiliation:
Department of Electrical Engineering, University of Nebraska, 209N WSEC Lincoln, NE 68588-0511
Joel D. Banninga
Affiliation:
Department of Electrical Engineering, University of Nebraska, 209N WSEC Lincoln, NE 68588-0511
N. J. Ianno
Affiliation:
Department of Electrical Engineering, University of Nebraska, 209N WSEC Lincoln, NE 68588-0511
Get access

Abstract

An excellent candidate for an earth abundant absorber material is WSe2 which can be directly grown as a p-type semiconductor with a band gap near 1.4 eV. In this work we present the structural, optical, and electrical properties of thin film WSe2 grown via the selenization of sputter deposited tungsten films. We will show that highly textured films with an optical band gap in range of 1.4 eV, and absorption coefficients greater than 105/cm across the visible spectrum can be easily achieved. In addition we will present Hall Effect and carrier density measurements as well, where will show densities in the 1017cm-3 range and p-type Hall mobilities greater than 10 cm2/V-s range can be obtained. We employ these results to numerically simulate solar cells based on this material, where we will show efficiencies greater than 20% are possible.

Keywords

photovoltaicthin filmW
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1670: Symposium E – Advances in the Characterization, Performance and Defect Engineering of Earth Abundant and Thin-Film Materials for Solar Energy Conversion , 2014 , mrss14-1670-e01-02
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Strehlow, W.H. and Cook, E.L., Journal of Physical and Chemical Reference Data 2, 163 (1973).10.1063/1.3253115CrossRefGoogle Scholar
Jain, S-P Ong, Hautier, G., Chen, W., Richards, W.D., Dacek, S., Cholia, S., Gunter, D., Skinner, D., Ceder, G., and Perssonn, K.A., APL Materials 1, 011002 (2013).10.1063/1.4812323CrossRefGoogle Scholar
LASSNER, E. and SCHUBERT, W-D., Tungsten: Properties, Chemistry, Technology of the Element, Alloys, and Chemical Compounds Kluwer Academic / Plenum Publishers, New York in 1999.10.1007/978-1-4615-4907-9CrossRefGoogle Scholar
Lux-Steiner, M. Ch., Võgt, M., Dolatzoglou, P., JãgerWaldau, A. and Bucher, E., Technical Digest 3rd Int. Photovoltaic Science and Engineering Conference, Tokyo, Japan, 687 (1987).Google Scholar
Jager-Waldau, and Bucher, E., Thin Solid Films 200, 157 (1991).10.1016/0040-6090(91)90038-YCrossRefGoogle Scholar
Pouzet, J., Bernede, J. C., Khellil, A., Essaidi, H. and Benhida, S., Thin Solid Films 208, 259 (1992).10.1016/0040-6090(92)90652-RCrossRefGoogle Scholar
Salitra, G., Hodes, G., Klein, E., and Tenne, R., Thin Solid Films 245 180, (1994).10.1016/0040-6090(94)90896-6CrossRefGoogle Scholar
Devadasan, J. Jebaraj, Sanjeeviraja, C. and Jayachandran, M. Materials Chemistry and Physics 77, 397 (2002).10.1016/S0254-0584(02)00095-0CrossRefGoogle Scholar
Hankare, P.P., Manikshete, A.H., Sathe, D.J., Chate, P.A. and Rathod, K.C. Materials Chemistry and Physics 113, 183–186 (2009).10.1016/j.matchemphys.2008.07.040CrossRefGoogle Scholar
Grigoriev, S.N., Fominski, V.Yu., Gnedovetsand, A.G. Romanov, R.I., Applied Surface Science 258 7000 (2012).10.1016/j.apsusc.2012.03.153CrossRefGoogle Scholar
Tonndorf, P., Schmidt, R., Böttger, P., Zhang, X., Börner, J., Liebig, A., Albrecht, M., Kloc, C., Gordan, O., Zahn, D. R. T., de Vasconcellos, S. Michaelis and Bratschitsch, Rudolf, Optics Express 21 4908–4916 (2013).10.1364/OE.21.004908CrossRefGoogle Scholar
Lang, O., Tomm, Y., Schalf, R., Pettenkofer, C. and Jaegermann, W., Journal of Applied Physics 75, 7814 (1994).10.1063/1.356563CrossRefGoogle Scholar
Davey, B., and Evans, B.L., Physica Status Solidi A 13, 483 (1972).10.1002/pssa.2210130217CrossRefGoogle Scholar
Solanki, G.K., Gujarathi, D.N., Deshoande, M.P., Lakshminarayana, D. and Agarwal, M.K., Crystal Research and Technology 43(2), 179–185 (2008).10.1002/crat.200711060CrossRefGoogle Scholar
Patel, K.K., Patel, K. D, Patel, M., Patel, C.A., Pathak, V.M. and Srivastava, R., AIP Conference Proceedings 1393, 251 (2011).10.1063/1.3653704CrossRefGoogle Scholar