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Thin Film Transistors with Layered a-Si:H Structure

Published online by Cambridge University Press:  15 February 2011

Yue Kuo
Yue Kuo*
Affiliation:
IBM T. J. Watson Research Center P.O. Box 218, Yorktown Heights NY 10598
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Abstract

Thin film transistors TFTs with the layered a-Si:H structure are presented and discussed. Compared with the conventional single layer a-Si:H TFT, transistor characteristics of this new structure can be superior or inferior, depending on the deposition condition and number of the bulk (non-interface) a-Si:H layers. The mechanism influencing transistor characteristics is discussed. Changes of these TFTs' characteristics are not significant, e.g., the mobility varies within 20%. More data are being collected to verify the statistical significance of this kind of TFT.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 701
Copyright
Copyright © Materials Research Society 1995

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References

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