Hostname: page-component-6bf8c574d5-vmclg Total loading time: 0 Render date: 2025-02-20T14:59:46.669Z Has data issue: false hasContentIssue false
  • English
  • Français

Thin Film Transistors based on Microcrystalline Silicon on Polyimiide Substrates

Published online by Cambridge University Press:  15 February 2011

A.P. Constant ,
T. Witt ,
K.A. Bratland ,
H.R. Shanks  and
A.R. Landin
A.P. Constant
Affiliation:
Microelectronics Research Center, Iowa State University, Ames Iowa
T. Witt
Affiliation:
Microelectronics Research Center, Iowa State University, Ames Iowa
K.A. Bratland
Affiliation:
Microelectronics Research Center, Iowa State University, Ames Iowa
H.R. Shanks
Affiliation:
Microelectronics Research Center, Iowa State University, Ames Iowa
A.R. Landin
Affiliation:
Microelectronics Research Center, Iowa State University, Ames Iowa
Get access

Abstract

This study reports on the fabrication of inverted gate TFT devices and circuits using a low temperature microcrystalline silicon deposition process compatible with polyimide substrates. Results from the electrical and material characterization of μ-Si:H based TFT's are presented. Device performance is compared with that of α-Si:H based TFT's constructed on polyimide. Results indicate that the anticipated improvement in device performance due to an increase in the α-Si:H Hall mobility (~10 cm2/V-sec) over that of α-Si:H (~1 cm2/V-sec) is not realized. Properties of μ-Si:H films are related to deposition parameters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 683
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Constant, A., Bums, S. G., Shanks, H. R., Gruber, C., Landin, A., Schmidt, D., Thielen, C., Olympie, F., Schumacher, T., and Cobbs, J. in Development of Thin Film Transistor Based Circuits on Polyimide Substrates, (Proceedings of the II Symposium on Thin Film Transistor Technology, Miami, FA, 1994) pp. 392–400.Google Scholar
2. Bums, S. G., Shanks, H. R., Constant, A. P., Gruber, C., Schmidt, D., Landin, A., and Olympie, F. in Design And Fabrication Of High Current Switching TFTs On Flexible Polyimide Substrates, edited by Y. (Proceedings of the III Symposium on Thin Film Transistor Technology, San Antonio, TX, 1996) pp. 382–390.Google Scholar
3. Bums, S. G., Shanks, H. R., Constant, A., Gruber, C., Schmidt, D., Landin, A., Thielen, C., Olympie, F., Schumacher, T., and Cobbs, J. in Design and Fabrication ofa-Si:H Based EEPROM Cells, (Proceedings of the II Symposium on Thin Film Transistor Technology, Miami, FA, 1994) pp. 370–380.Google Scholar
4. Jackson, W.B., Marshall, J.M. and Moyer, M.D., Phys. Rev. B, 39, 1164 (1989).Google Scholar
5. Sanjoh, A., Ikeda, N., Komaki, K., J. Electrochem. Soc., 138, 1474 (1991).Google Scholar
6. Bratland, K. A., Masters Thesis, Iowa State University, 1998.Google Scholar