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Thin Film Growth of Zinc Oxide by Vapor Phase Epitaxy

Published online by Cambridge University Press:  21 March 2011

James A. Ellis ,
William F. Seng  and
Peter A. Barnes
James A. Ellis
Affiliation:
Department of Physics, Auburn University Auburn, AL 36849, U.S.A.
William F. Seng
Affiliation:
Department of Physics, Auburn University Auburn, AL 36849, U.S.A.
Peter A. Barnes
Affiliation:
Department of Physics, Auburn University Auburn, AL 36849, U.S.A.
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Abstract

Zinc Oxide is a potentially valuable semiconductor with photoconducting, piezoelectric, optoelectronic, and optical waveguide applications. A technique for the growth of ZnO epitaxial layers is necessary for improved device fabrication. Previously, attempts at ZnO epitaxial growth were constrained to sapphire substrates using sputtering as the preferred preparation technique. However, with the present availability of single crystal ZnO substrates the hope of high quality epitaxial layers exists. The authors will discuss several possibilities for growth precursors, and the resulting chemical reactions required for the formation of ZnO. This presentation discusses the growth of ZnO epitaxial layers by chemical vapor deposition without using metal-organic compounds. The thermodynamics and predicted growth rates for several reactions are presented as well as the preliminary growth results. The preliminary growths are characterized with the aid of Hall Effect measurements, providing information on resistivity, Hall mobility, and carrier concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 666: Symposium F – Transport and Microstructural Phenomena , 2001 , F3.22
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Park, Y., “Evolution of ZnO,” presented at the First International Workshop on ZnO, Dayton, Ohio, 1999 (unpublished).Google Scholar
2. Harris, M., Suscavage, M., Bliss, D., Yip, P., Wang, S.-Q., Schwall, D., Bouthillette, L., Bailey, J., Callahan, M., Look, C. C., Reynolds, D. C., Jones, R. L., and Litton, C. W., “High Quality Hydrothermal ZnO Crystals,” presented at the First International Workshop on ZnO, Dayton, Ohio, 1999 (unpublished).Google Scholar
3. Yao, T., Chen, Y. F., Ko, H. J., Hong, S. K., Yamamoto, A., and Goto, T., “Plasma assisted MBE growth and their characteristics of ZnO layers and related heterostructures,” presented at the First International Workshop on ZnO, Dayton, Ohio, 1999 (unpublished).Google Scholar
4. Tompa, G. S., Provost, L. G., Zhang, C., and Glumac, N., “Rotating Disk Reactor-Low Pressure Metal Organic Chemical Vapor Deposition (MOCVD) Production of ZnO and Related Films,” presented at the First Internation Workshop on ZnO, Dayton, Ohio, 1999 (unpublished).Google Scholar
5. Advani, G. N., Jordan, A. G., Lupis, C. H. P., and Longini, R. L., Thin Solid Films, 62, 361 (1979).Google Scholar
6. Barin, I., Thermochemical Data of Pure Substances, (Weinheim, 1995).Google Scholar
7. Reisman, A. and Landstein, J. E., J. Electrochem. Soc., 118, 1479 (1971).Google Scholar
8. Theurer, H. C., J. Electrochem. Soc., 108, 649 (1961).Google Scholar