Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-29T06:56:11.248Z Has data issue: false hasContentIssue false
  • English
  • Français

Thickness-fringe Contrast Analysis of Defects in GaN

Published online by Cambridge University Press:  18 March 2011

Jeffrey K. Farrer ,
C. Barry Carter ,
Z. Mao  and
Stuart McKernan
Jeffrey K. Farrer
Affiliation:
Dept. of Chemical Engineering and Materials Science, University of Minnesota421 Washington Ave. S.E., Minneapolis MN 55455, USA
C. Barry Carter
Affiliation:
Dept. of Chemical Engineering and Materials Science, University of Minnesota421 Washington Ave. S.E., Minneapolis MN 55455, USA
Z. Mao
Affiliation:
Dept. of Chemical Engineering and Materials Science, University of Minnesota421 Washington Ave. S.E., Minneapolis MN 55455, USA
Stuart McKernan
Affiliation:
Dept. of Chemical Engineering and Materials Science, University of Minnesota421 Washington Ave. S.E., Minneapolis MN 55455, USA
Get access

Abstract

The analysis of thickness-fringe contrast in weak-beam transmission electron microscope (TEM) images has been shown to be a reliable method for the complete determination of the character, as well as the magnitude, of a dislocation Burgers vector. By selecting multiple diffraction conditions and, for each condition, determining the number of terminating thickness fringes at the exit of a dislocation from a wedge-shaped sample, the Burgers vector can be unambiguously determined. Defect analysis of GaN pyramids grown on (111)Si by the lateral epitactic overgrowth (LEO) technique reveals a core region which contains a relatively high density of dislocations and a lateral-growth region where the defect density is decreased. The thickness-fringe contrast technique was used in the lateral growth regions of the pyramids to analyze the dislocation Burgers vectors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 673: Symposium P – Dislocations and Deformation Mechanisms in Thin Films and Small Structures , 2001 , P32.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Williams, D.B., Carter, C. B., Transmission Electron Microscopy-A Textbook for Materials Science (Plenum Press, New York, 1996).Google Scholar
2. Ishida, Y., Ishida, H. and Kohra, K., Fifth International Conference on High Voltage Electron Microscopy, 623–6 (1977).Google Scholar
3. Nam, O., Bremser, M.D., Ward, B.L., Nemanich, R.J. and Davis, R.F., Japanese Journal of Applied Physics 36 (5A), L532 (1997).Google Scholar
4. Mao, Z., , McKernan, Carter, C. B., Yang, W., McPherson, S. A., MRS Internet J. of Nitride Semicond. Res. 4S1, G3.13 (1999).Google Scholar
5. Mao, Z., Johnson, M.T. and Carter, C.B., Microscopy and Microanalysis 4 (Suppl. 2), 628–9 (1998).Google Scholar
6. Ishida, Y., Ishida, H., Kohra, K., Ichinose, H., Phil. Mag. A 42, 453–62 (1980).Google Scholar
7. Schapink, F.W., Phys. Stat. Sol. A 29, 623–34 (1975).Google Scholar