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Thickness-Dependent Electrical Properties in Lanthanum-Doped Pzt Thick Films

Published online by Cambridge University Press:  10 February 2011

H.D. Chen ,
K.K. Li ,
C.J. Gaskey  and
L.E. Cross
H.D. Chen
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
K.K. Li
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
C.J. Gaskey
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
L.E. Cross
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
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Abstract

Lanthanum-doped lead zirconate titanate (PLZT) films, with thickness up to 10 μm, are fabricated on platinized silicon substrates through a modified sol-gel technique. Thicknessdependent piezoelectric properties measured with a double-beam laser interferometer show piezoelectric relaxation in field-induced strain as the ac driving field exceeds 10 kV/cm. In addition, the strain levels of PLZT thick films are approximately one third of those of undoped PZT films under the same fabrication and measurement conditions. For 1 μm PZT(55/45) films doped with 0, 2, and 4 mole% La, the P-E hysteresis exhibits decreasing squareness with increasing lanthanum content while the piezoelectric d33 coefficient reduces from 130 to 52 pC/N. Residual (tensile) stress in these films and resulted depoling effect may be responsible for this phenomenon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 433: Symposium T – Ferroelectric Thin Films V , 1996 , 325
Copyright
Copyright © Materials Research Society 1996

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References

1. Haertling, G.H. and Land, C.E., J. Am. Ceram. Soc., 54, 1 (1971).Google Scholar
2. Moulson, A.J. and Herbert, J.M., Electroceramics: Materials, Properties, and Applications, (Chapman and Hall, New York, 1990), p. 362.Google Scholar
3. Haertling, G.H., Ferroelectrics, 75, 25 (1987).Google Scholar
5. Chen, H.D., Udayakumar, K.R., Cross, L.E., Bernstein, J.J., and Niles, L.C., J. Appl. Phys., 77, 3349 (1995).Google Scholar
6. Bemstein, J.J., Houston, K., Niles, L.C., Udayakumar, K.R., Chen, H.D., and Cross, L.E., (accepted for publication in IEEE J. Ferroelectrics and Frequency Control).Google Scholar
7. Chen, H.D., Udayakumar, K.R., Gaskey, C.J., Cross, L.E., Bemstein, J.J., and Niles, L.C., (accepted for publication in J. Am. Ceram. Soc. Communication).Google Scholar
8. Pan, W.Y. and Cross, L.E., Rev. Sci. Instrum., 60, 2701 (1989).Google Scholar
9. Jaffe, B., Cook, W.R. Jr.,, and Jaffe, H., Piezoelectric Ceramics, (Academic Press, New York, 1971), p. 154.Google Scholar
10. Li, K.K., Ph. D. thesis, Clemson University, 1993.Google Scholar
11. Herbert, J.M., Ferroelectric Transducers and Sensors, (Gordon and Breach Science Publishers, New York, 1982), p. 37.Google Scholar
12. Technical Report to The C. S. Draper Laboratory, Cambridge, MA (1995).Google Scholar