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Thickness-Dependant Electrical Characteristics of Nitrogen-Doped Polycrystalline 3C-SiC Thin Films Deposited by LPCVD

Published online by Cambridge University Press:  31 January 2011

Man I Lei ,
Te-Hao Lee  and
Mehran Mehregany
Man I Lei
Affiliation:
[email protected], Case Western Reserve University, Materials Science and Engineering, Cleveland, Ohio, United States
Te-Hao Lee
Affiliation:
[email protected], Case Western Reserve University, Materials Science and Engineering, Cleveland, Ohio, United States
Mehran Mehregany
Affiliation:
[email protected], Case Western Reserve University, Electrical Engineering and Computer Science, Cleveland, Ohio, United States
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Abstract

The effect of film thickness on the electrical resistivity of heavily-nitrogen-doped polycrystalline SiC (poly-SiC) thin films is investigated. The resistivity of poly-SiC thin films decreases by a factor of ˜7 for thickness increasing from 100 nm-thick to 1.78 μm-thick; the resistivity begins to stabilize as thickness approaches 1 μm. The increased resistivity for the thinner films is shown to be related to the grain boundary effect. Secondary ion mass spectrometry indicates a nitrogen concentration of 9×1020 atoms/cm3 in the films. However, Hall measurements reveal that only 45% of the dopants are electrically active in the 100 nm-thick film. The percentage of active dopants rises to 80% when film thickness increases to 680 nm. From the studies of surface roughness and microstructure, it is seen that small grains are formed at the initial stage of deposition, which then grow into larger columnar grains as film thickness increases. The presence of a large density of grain boundaries and limited grain growth for the very thin films contribute to increased electrical resistivity from increased trapped mobile carriers and reduced carrier mobility. The free carrier trapping phenomenon can further be observed in the temperature-dependence of resistance measurement.

Keywords

grain boundariesthin filmelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1222: Symposium DD – Microelectromechanical Systems — Materials and Devices III , 2009 , 1222-DD02-33
Copyright
Copyright © Materials Research Society 2010

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References

1 Wijesundara, M. B. J. Stoldt, C. R. Carraro, C. Howe, R. T. and Maboudian, R. Thin Solid Films 419, 69 (2002).Google Scholar
2 Mehregany, M. Zorman, C. A. Roy, S. Fleischman, A. J. Wu, C. H. and Rajan, N. Int. Mat. Rev. 45, 85 (2000).Google Scholar
3 Lee, J. Lei, M. I. Rajgopal, S. and Mehregany, M. in 15th International Conference on TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, Denver, CO, 2009, pp. 1861–1864.Google Scholar
4 Huang, X. M. H. Zorman, C. A. Mehregany, M. and Roukes, M. L. Nature 421, 496 (2003).Google Scholar
5 Lee, T.H. Speer, K. M. Fu, X. A. Bhunia, S. and Mehregany, M. in 15th International Conference on TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, Denver, CO, 2009, pp. 900–903.Google Scholar
6 Roper, C. S. Radmilovic, V. Howe, R. T. and Maboudian, R. J. Electrochem. Soc. 156, D5 (2009).Google Scholar
7 Noh, S. Fu, X. L. Chen and Mehregany, M. Sens. Actuators A136, 613 (2007).Google Scholar
8 Fu, X. Dunning, J. L. Zorman, C. A. and Mehregany, M. Sens. Actuators, A119, 169 (2005).Google Scholar
9 Kamins, T. Polycrystalline Silicon for Integrated Circuit Applications (Kluwer academic publishers, Boston, 1988) pp. 155–202.Google Scholar
10 Petkovic, D. M. and Mitic, D. Z. in 20th International Conference on Microelectronics Proceedings, Nis, Serbia, 1995, pp. 145–148.Google Scholar
11 Zhang, J. Howe, R. T. and Maboudian, R. J. Electrochem. Soc. 153, G548 (2006).Google Scholar