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Thickness Dependence of Induced Ferroelectricity in Epitaxially Grown Ba0.44Sr0.56TiO3 Thin Films

Published online by Cambridge University Press:  15 February 2011

Kazuhide Abe  and
Shuichi Komatsu
Kazuhide Abe
Affiliation:
Materials and Devices Research Laboratories, R&D Center, Toshiba Corporation, Komukai Toshiba-cho, Saiwaiku, Kawasaki 210, Japan
Shuichi Komatsu
Affiliation:
Materials and Devices Research Laboratories, R&D Center, Toshiba Corporation, Komukai Toshiba-cho, Saiwaiku, Kawasaki 210, Japan
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Abstract

Ba0.44Sr0.56TiO3 (BST) thin films with various thicknesses were epitaxially grown on Pt/MgO(100) substrates with rf magnetron sputtering. The thickness dependence of lattice constant, D-E hysteresis and dielectric constant were evaluated for the BST films. The lattice constant in the thickness direction is elongated through the thickness range (33 to 221 nm), whereas the ferroelectric and the dielectric properties had strong thickness dependencies. The mechanism of the induced ferroelectricity is discussed in terms of the thickness dependence and deposition technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 465
Copyright
Copyright © Materials Research Society 1995

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References

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