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Thickness and Interface Layer Effects on the Amorphous Silicon Film Property Studied by Various Photoluminescence Excitation Wavelengths

Published online by Cambridge University Press:  17 March 2011

Guozhen Yue ,
Daxing Han ,
Jeffrey Yang  and
Subhendu Guha
Guozhen Yue
Affiliation:
Department of Physics & Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599-3255, USA
Daxing Han
Affiliation:
Department of Physics & Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599-3255, USA
Jeffrey Yang
Affiliation:
United Solar Systems Corp., 1100W Maple Road, Troy, Michigan 48084, USA
Subhendu Guha
Affiliation:
United Solar Systems Corp., 1100W Maple Road, Troy, Michigan 48084, USA
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Abstract

We have studied the structure of highly hydrogen-diluted a-Si:H films by using Raman and photoluminescence (PL) spectroscopies. Raman spectra show a typical broad a-Si:H peak in the films with different substrate surfaces or i-layer thicknesses, except for one 1.4 μm film deposited directly onto a stainless steel (ss) substrate that shows the c-Si peak. An apparent μc-Si component was characterized by a low energy PL enhancement in a 0.5 μm film deposited directly onto the ss substrate. When a thin n-layer was inserted between the substrate and the a-Si film, no μc-Si growth was found in the first 0.5-1.0 μm thick layer but there was a μc-Si component in the top surface layer when the film was grown to a 1.5 μm thickness. The nonuniformity structure along the growth direction was characterized by PL spectroscopy using varied laser excitation wavelengths of 325, 488, 514.5, and 632.8 nm. We find that PL spectroscopy is a sensitive tool to characterize the microcrystallinity of the film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A5.9
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

[1]Yang, J., Xu, X., and Guha, S., Mater. Res. Soc. Sysmp. Proc. 336, 687, (1994).Google Scholar
[2]Lee, Y., Jiao, L., Liu, H., Lu, Z., Collins, R.W., and Wronski, C.R., Conference Record of the 25th IEEE PVSC, IEEE, New York, 1996, p1165.Google Scholar
[3]Tsu, D.V., Chao, B.S., Ovshinsky, S.R., Guha, S., and Yang, J., Appl. Phys. Lett., 71, 1317, (1997).Google Scholar
[4]Guha, S., Yang, J., Williamson, D.L., Lubianiker, Y., Cohen, J.D. and Mahan, A.H., Appl. Phys Lett., 74, 1860, (1999).Google Scholar
[5]Koh, Joohyun, Ferlauto, A.S., Rovira, P.I., Wronski, C.R., and Collins, R.W., Appl. Phys. Lett., 75, 2286 (1999)Google Scholar
[6]Yang, J., private communication.Google Scholar
[7]Beeman, D., Tsu, R., and Thorpe, M.F., Phys. Rev. B32, 874, (1985).Google Scholar
[8]Yue, Guozhen, Lorentzen, J.D., Lin, Jing, Han, Daxing, and Wang, Qi, Appl. Phys. Lett., 75, 492, (1999).Google Scholar
[9]Veprek, S., Sarott, F.A., and Iqbal, Z., Phys. Rev. B36, 3344, (1987).Google Scholar