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Thermo-Electrical Analysis of an Optoelectronic Modulator Integrated in a SOI Rib Waveguide Operating in the Gb/s Regime

Published online by Cambridge University Press:  01 February 2011

Mario Iodice ,
Giuseppe Coppola  and
Rocco Cristian Zaccuri
Mario Iodice
Affiliation:
[email protected], Istituto per la Microelettronica e Microsistemi, Consiglio Nazionale delle RIcerche, Via Pietro Castellino 111, Napoli, N/A, 80131, Italy, +390816132372, +390816132598
Giuseppe Coppola
Affiliation:
[email protected], Consiglio Nazionale delle Ricerche, Istituto per la Microelettronica e Microsistemi, Via Pietro Castellino 111, Napoli, N/A, 80131, Italy
Rocco Cristian Zaccuri
Affiliation:
[email protected], Consiglio Nazionale delle Ricerche, Istituto per la Microelettronica e Microsistemi, Via Pietro Castellino 111, Napoli, N/A, 80131, Italy
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Abstract

Silicon is the most diffused material for microelectronic industry and, in recent times, it is becoming more and more widespread in integrated optic and optoelectronic fields. We present the thermo-electro-optical analysis of an integrated waveguide-vanishing-based optical modulator based on free-carrier dispersion effect, realizable on standard SOI wafer. The optical behavior is based on the vanishing of the lateral confinement in the rib region, and consequent cut-off of the propagating mode. Results show that an optical modulation depth close to 100% can be reached with a bandwidth of about 154 MHz. Smart electrical driving, that is an injection overdrive of a few volts for a very short time, allows to reach total ON-OFF switching time of about 860 ps. For that bias scheme the fall transient is then limiting the whole dynamic and the resulting bit rate in a pure digital modulation scheme is about 1.2 Gb/s

Keywords

optoelectronicSimicroelectronics
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 934: Symposium I – Silicon-Based Microphotonics , 2006 , 0934-I10-02
Copyright
Copyright © Materials Research Society 2006

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