Hostname: page-component-cd9895bd7-gxg78 Total loading time: 0 Render date: 2024-12-27T02:38:06.042Z Has data issue: false hasContentIssue false

Thermoelectric Properties of Nano-structure Controlled Sm2−xCexCuO4 Thin Films

Published online by Cambridge University Press:  01 February 2011

Yusuke Ichino
Affiliation:
[email protected], Nagoya University, Dept. of Energy Engineering and Science, Furo-cho, Chikusa-ku, Nagoya, N/A, 464-8603, Japan, +81-52-789-3777, +81-52-789-3777
Koji Yamazaki
Affiliation:
[email protected], Nagoya University, Dept. of Energy Engineering and Science, Furo-cho, Chikusa-ku, Nagoya, N/A, 464-8603, Japan
Tomoki Yoshikawa
Affiliation:
[email protected], Nagoya University, Dept. of Energy Engineering and Science, Furo-cho, Chikusa-ku, Nagoya, N/A, 464-8603, Japan
Yutaka Yoshida
Affiliation:
[email protected], Nagoya University, Dept. of Energy Engineering and Science, Furo-cho, Chikusa-ku, Nagoya, N/A, 464-8603, Japan
Yoshiaki Takai
Affiliation:
[email protected], Nagoya University, Dept. of Energy Engineering and Science, Furo-cho, Chikusa-ku, Nagoya, N/A, 464-8603, Japan
Get access

Abstract

Sm2−xCexCuO4 (SCCO) is well known as an n-type superconductor with large physical anisotropies. In order to enhance the thermoelectric conversion performance, we have prepared the SCCO epitaxial films and controlled a crystallographic orientation, a carrier concentration and an introduction of nano-structures. The SCCO films and nano-structures consisting of CeO2 were fabricated using pulsed laser deposition method on SrTiO3 single crystalline substrates. Due to the orientation control and the optimization of carrier concentration, a low resistivity and a high Seebeck coefficient were achieved, and a power factor (PF) reached 1.14×10−3 W/mK2 at 323 K in the SCCO film with x × = 0.02. In addition, we measured the nano-structural effect on the PF of SCCO films. As a result, the PF showed a maximum in the film on a certain shape of the nano-structures. We speculate that the low resistivity was achieved by a formation of high Ce concentration layer near the interface between film and nano-structure.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Terasaki, I., Sasago, Y., and Uchinokura, K., Phys. Rev. B. 56, 12685 (1997).Google Scholar
2. Funahashi, R., Matsubara, I., Sodeoka, S., Ikuta, H., Takeuchi, T., and Mizutani, U., Jpn. J. Appl. Phys. 39, L1127 (2000).Google Scholar
3. Ohtaki, M., Tsubota, T., Eguchi, K., and Arai, H., J. Appl. Phys. 79, 1816 (1996).Google Scholar
4. Khan, M. K. R., Tanabe, H., Tanaka, I., and Kojima, H., Physica C 258, 315 (1996).Google Scholar
5. Bednorz, J. G. and, Muller, K. A., Z. Phys. B 64, 189 (1986).Google Scholar
6. Tokura, Y., Takagi, H., and Uchida, S., Nature 337, 345 (1986).Google Scholar
7. Yasukawa, M., and Murayama, N., J. Mater. Sci. 32, 6489 (1997).Google Scholar
8. Sato, H., Naito, M., Kinoshita, S., Arima, T., and Tokura, Y., Appl. Phys. Lett. 66, 514 (1995).Google Scholar
9. Sato, H., and Naito, M., Physica C 274, 221 (1997).Google Scholar
10. Rowe, D. M., and Shukla, V. S., J. Appl. Phys. 52, 7421 (1981).Google Scholar
11. Fletcher, R., Phys. Rev. B. 36, 3042 (1987).Google Scholar
12. Shen, Q., Chen, L., Goto, T., Hirai, T., Yang, J., Meisner, G. P., and Uher, C., Appl. Phys. Lett. 79, 4165 (2001).Google Scholar
13. Kim, W., Zide, J., Gossard, A., Klenov, D., Stemmer, S., Shakouri, A., and Majumdar, A., Phys. Rev. Lett. 96, 045901 (2006).Google Scholar
14. Nie, J. C., Yamasaki, H., Yamada, H., Nakagawa, Y., and Develos-Bagarinao, K., Supercond. Sci. Technol. 16, 768 (2003).Google Scholar