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Thermoelectric properties and microstructure of large-grain Mg2Sn doped with Ag

Published online by Cambridge University Press:  31 January 2011

Haiyan Chen  and
Nick Savvides
Haiyan Chen
Affiliation:
[email protected]@hotmail.com, CSIRO, Materials Science & Engineering, Sydney, New South Wales, Australia
Nick Savvides
Affiliation:
[email protected], CSIRO, Materials Science & Engineering, Sydney, New South Wales, Australia
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Abstract

Mg2Sn ingots, doped p-type by the addition of 0–1.0 at. % Ag, were prepared by the vertical Bridgman method at growth rates ∼0.1 mm/min. The crystalline quality and microstructure of ingots were analyzed by X-ray diffraction, scanning electron microscopy and energy-dispersive X-ray spectroscopy. The single-phase Mg2Sn ingots consist of highly oriented large grains. Measurements of the Hall coefficient, Seebeck coefficient α, and electrical conductivity σ in the temperature range 80–700 K were conducted to study the dependence on the silver content, and to determine the thermoelectric power factor α2σ which reached a maximum value 2.4×10-3 W m-1 K-2 at 410 K for 1.0 at.% Ag content.

Keywords

thermoelectricmicrostructurecrystalline
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1166: Symposium N – Materials and Devices for Thermal-to-Electric Energy Conversion , 2009 , 1166-N03-26
Copyright
Copyright © Materials Research Society 2009

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References

1 Venkatasubramanian, R., Siivola, E., Colpitts, T., and O'Quinn, B., Nature 413, 597 (2001).10.1038/35098012Google Scholar
2 Hsu, K.F., Loo, S., Guo, F., Chen, W., Dyck, J.S., Uher, C., Hogan, T., Polychroniadis, E.K., and Kanatzidis, M.G., Science 303, 818 (2004).Google Scholar
3 Poudel, B., Hao, Q., Ma, Y., and Lan, A.M. Yucheng, Yu, Bo, Yan, Xiao, Wang, Dezhi, Muto, Andrew, Vashaee, Daryoosh, Chen, Xiaoyuan, Liu, Junming, Dresselhaus, Mildred S., Chen, Gang, and Ren, Zhifeng, Science 320, 634 (2008).10.1126/science.1156446Google Scholar
4 Ioffe, A.F., Semiconductor Thermoelements and Thermoelectric Cooling, (Infosearch Ltd., pLondon, UK, 1957).Google Scholar
5 Goldsmid, H.J., Thermoelectric Refrigeration, (Plenum, New York, 1964).Google Scholar
6 Savvides, N. and Goldsmid, H.J., J. Phys. C 6, 1701 (1973).Google Scholar
7 Rowe, D.M., Shukla, V.S., and Savvides, N., Nature 290, 765 (1981).Google Scholar
8 Winkler, U., Helv. Phys. Acta 28, 633 (1955).Google Scholar
9 Morris, R.G., Redin, R.D., and Danielson, G.C., Phys. Rev. 109, 1909 (1958).Google Scholar
10 Redin, R.D., Morris, R.G., and Danielson, G.C., Phys. Rev. 109, 1916 (1958).Google Scholar
11 Zaitsev, V.K., Fedorov, M.I., Gurieva, E.A., Eremin, I.S., Konstantinov, P.P., Samunin, A.Y., and Vedernikov, M.V., Phys. Rev. B. 74, (2006).Google Scholar
12 Riffel, M. and Schilz, J., Scripta Mater. 32, 1951 (1995).10.1016/0956-716X(95)00044-VGoogle Scholar
13 Aizawa, T., Song, R., and Yamamoto, A., Mater. Trans. JIM 46, 1490 (2005).Google Scholar
14 Tani, J. and Kido, H., Physica B 364, 218 (2005).10.1016/j.physb.2005.04.017Google Scholar
15 Nolas, G.S., Wang, D., and Beekman, M., Phys. Rev. B 76, 235204 (2007).Google Scholar
16 Zhang, Q., He, J., Zhu, T.J., Zhang, S.N., Zhao, X.B., and Tritt, T.M., Appl. Phys. Lett. 93, 102109 (2008).Google Scholar
17 Chen, H.Y. and Savvides, N., J. Elec. Mater., in press (2009).Google Scholar
18 Chuang, C., Savvides, N., and Li, S., J. Elec. Mater., in press (2009).Google Scholar
19 Savvides, N. and Chen, H.Y., to be published (2009).Google Scholar