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Thermoelectric Properties and Electronic Structure of BaBiTe3

Published online by Cambridge University Press:  15 February 2011

Duck-Young Chung
Affiliation:
Department of Chemistry and Center for Fundamental Materials Research, Michigan State University, East Lansing, MI 48824.
Stéphane Jobic
Affiliation:
Institut des Matériaux de Nantes, 2 Rue de la Houssinière, 44072 Nantes Cedex 03, France
Tim Hogan
Affiliation:
Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, IL 60208
Carl R. Kannewurf
Affiliation:
Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, IL 60208
Raymond Brec
Affiliation:
Institut des Matériaux de Nantes, 2 Rue de la Houssinière, 44072 Nantes Cedex 03, France
Jean Rouxel
Affiliation:
Institut des Matériaux de Nantes, 2 Rue de la Houssinière, 44072 Nantes Cedex 03, France
Mercouri G. Kanatzidis
Affiliation:
Department of Chemistry and Center for Fundamental Materials Research, Michigan State University, East Lansing, MI 48824. Institut des Matériaux de Nantes, 2 Rue de la Houssinière, 44072 Nantes Cedex 03, France
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Abstract

The compound BaBiTe3 was prepared by the reaction of Ba/Bi/Te at over 700 °C either in K2TE4 or BaTe3 flux and was recrystallized in Ba/Te3 flux. The black rod-shaped polycrystalline material crystallizes in the orthorhombic space group P212121 with a=4.6077(2) A, b=17.0437(8) Å, c=18.2997(8) Å. Its structure is made of interdigitating columnar anionie [Bi4Te10(Te2)] ∞2+ “herring-bone” shaped segments which arrange into layers with Ba ions between them. The electrical conductivity, thermopower, thermal lattice conductivity, infrared absorption properties of this material suggest it is a narrow gap semiconductor.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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