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Published online by Cambridge University Press: 15 February 2011
The compound BaBiTe3 was prepared by the reaction of Ba/Bi/Te at over 700 °C either in K2TE4 or BaTe3 flux and was recrystallized in Ba/Te3 flux. The black rod-shaped polycrystalline material crystallizes in the orthorhombic space group P212121 with a=4.6077(2) A, b=17.0437(8) Å, c=18.2997(8) Å. Its structure is made of interdigitating columnar anionie [Bi4Te10(Te2)] ∞2+ “herring-bone” shaped segments which arrange into layers with Ba ions between them. The electrical conductivity, thermopower, thermal lattice conductivity, infrared absorption properties of this material suggest it is a narrow gap semiconductor.