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Thermoelectric Power in Quantum Confined Optoelectronic Materials under Classically Large Magnetic Field

Published online by Cambridge University Press:  16 February 2011

Kamakhya P. Ghatak ,
B. De ,
M. Mondal  and
S. N. Biswas
Kamakhya P. Ghatak
Affiliation:
Department of Electronics and Telecommunication Engineering, Faculty of Engineering and Technology, University of Jadavpur, Calcutta-700032, India.
B. De
Affiliation:
13 Little Brook Road, CT-06820, Darien, U.S.A.
M. Mondal
Affiliation:
Department of Physics, Y.S. Palpara College, P.O.Box 721458, Midnapore, West Bengal India.
S. N. Biswas
Affiliation:
Department of Electronics and Telecommunication Engineering, B.E. College, Shibpur, Hovwah-711103, West Bengal, India.
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Abstract

We shall study the thermoelectric power under classically large magnetic field (TPM) in optoelectronic materials of quantum wells (QWs), quantum well wires (QWW's), quantum dots (QDs) and compare the same with the bulk specimens of optoelectronic materials by formulating the respective electron dispersion law. The TPM increases with decreasing electron concentration in an oscillatory manner in all the cases, taking n-Hg1−xCdxTe as an example. The TPM in QD is greatest and the least for quantum wells respectively. The thecoretical results are in agreement with the experimental observations as reported elsewhere.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 184: Symposium F – Degradation Mechanisms in III-V Compound Semiconductor Devices and Structures , 1990 , 261
Copyright
Copyright © Materials Research Society 1990

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References

1. Scifres, D.R., Lindstrom, C., Burnham, R.D., Streifer, W. and Paoli, T.L., Electron. Letts. 19, 170 (1983)10.1049/el:19830118Google Scholar
2. Salomon, P.M., Proc. IEEE 70 439 (1982); T.L. Schlesinger and T. Kuech, Appl. Phys. Letts. 49, 519 (1986).Google Scholar
3. Hieblum, H., Thomas, D.C., Knoedler, C.M. and Nathan, M.I., Appl. Phys. Letts. 47 1105 (1985); S. Torucha and H. Okamoto, Appl. Phys. Letts. 45, 1 (1984).10.1063/1.96344Google Scholar
4. Zawadzki, W., Adv. Phys. 23, 435 (1974); Springer series in Solid State Sciences, 53, 79 (1984).10.1080/00018737400101371Google Scholar
5. Ghatak, K.P. and Mondal, M., Phys. Stat. Sol. (b) 135, 819 (1986); I.M. Tsidilkovski, Band Structure of Semiconductors (Pergamon Press, London, 1982) p. 313; K.P.Ghatak and M. Mondal, J. Appl. Phys. 65, 3480 (1988).10.1002/pssb.2221350242Google Scholar
6. Lu, P.Y., Wang, C.H., Williams, C.M., Chu, S.N.G. and Stiles, C.M., Appl. Phys. Letts. 49, 1372 (1986).10.1063/1.97328Google Scholar
7. Nag, B.R., Electron Transport in Compound Semiconductors, Slringer-Verlag, Berlin, Heidelberg, New York, 1980.10.1007/978-3-642-81416-7Google Scholar
8. Mitra, B., Ghoshal, A. and Ghatak, K.P., Acta Phys. Slov. 39, 45 (1989).Google Scholar
9. Gelmont, B.I., Jour. Theor. and Exp. Phys. 98, 101 (1989).Google Scholar
10. Ghatak, K.P. and Mondal, D., J. Thin. Solid Films, 148, 219 (1987).10.1016/0040-6090(87)90160-XGoogle Scholar