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Thermoelectric Power Devices Based on InN Thin Films
Published online by Cambridge University Press: 26 February 2011
Abstract
We have studied the temperature dependence of thermoelectric properties of amorphous InN thin films prepared by reactive radio-frequency sputtering. We fabricated 60-pair and 120-pair InN-chromel films, which were deposited on polyimide films. For the 120-pair device, the maximum open output voltage and the maximum output power were 210 mV and 65 nW, respectively, at temperature difference of 168 K.
Keywords
- Type
- Research Article
- Information
- MRS Online Proceedings Library (OPL) , Volume 973: Symposium BB – Mobile Energy , 2006 , 0973-BB04-09
- Copyright
- Copyright © Materials Research Society 2007