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Thermoelectric and Electrical Properties of InSb Thin Films Prepared by Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  26 February 2011

Masashi Matsumoto ,
Jun Yamazaki  and
Shigeo Yamaguchi
Masashi Matsumoto
Affiliation:
[email protected], Kanagawa University, Electrical Electronics and Infomation Engineering, 3-27-1 Rokkakubashi Kanagawa-ku, Yokohama, 221-8686, Japan
Jun Yamazaki
Affiliation:
[email protected], Kanagawa University, Yokohama, 221-8686, Japan
Shigeo Yamaguchi
Affiliation:
[email protected], Kanagawa University, Yokohama, 221-8686, Japan
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Abstract

We studied the thermoelectric and electrical properties of InSb thin films prepared by metalorganic chemical vapor deposition. The thermoelectric properties were evaluated using power factor (Pf =α2/Ï), which is an important criterion, and a value of 10-3 W/mK2 is a standard for practical use. Maximum value of Pf was 2.4×10-3W/mK2 at 600K for 1-μm-thick InSb, 3.4×10-3W/mK2 at 600K for 3-μm-thick InSb, and 5.8×10-3W/mK2 at 600K for 5-μm-thick InSb. On the other hand, the maximum Pf of bulk-InSb was 5.4×10-3W/mK2 at 600K.

Keywords

thermoelectricitychemical vapor deposition (CVD) (deposition)III-V
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 980: Symposium II – Advanced Intermetallic-Based Alloys , 2006 , 0980-II05-42
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

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