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Thermodynamic Stability of High-K Dielectric Metal Oxides ZrO2 and HfO2 in Contact with Si and SiO2

Published online by Cambridge University Press:  01 February 2011

Maciej Gutowski ,
John E. Jaffe ,
Chun-Li Liu ,
Matt Stoker ,
Rama I. Hegde ,
Raghaw S. Rai  and
Philip J. Tobin
Maciej Gutowski
Affiliation:
Pacific Northwest National Laboratory Environmental Molecular Sciences Laboratory Theory, Modeling & Simulations Richland, WA 99352, USA Department of Chemistry, University of Gdańsk 80-952 Gdańsk, Poland
John E. Jaffe
Affiliation:
Pacific Northwest National Laboratory Environmental Molecular Sciences Laboratory Theory, Modeling & Simulations Richland, WA 99352, USA
Chun-Li Liu
Affiliation:
Advanced Process Development and External Research Laboratory, Motorola, Mesa, AZ 85202, USA
Matt Stoker
Affiliation:
Advanced Process Development and External Research Laboratory, Motorola, Mesa, AZ 85202, USA
Rama I. Hegde
Affiliation:
Advanced Process Development and External Research Laboratory, Motorola, Austin, TX 78721, USA
Raghaw S. Rai
Affiliation:
Advanced Process Development and External Research Laboratory, Motorola, Austin, TX 78721, USA
Philip J. Tobin
Affiliation:
Advanced Process Development and External Research Laboratory, Motorola, Austin, TX 78721, USA
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Abstract

We present experimental results regarding the thermodynamic stability of the high-k dielectrics ZrO2 and HfO2 in contact with Si and SiO2. The HfO2/Si interface is found to be stable with respect to formation of silicides whereas the ZrO2/Si interface is not. The metal oxide/SiO2 interface is marginally unstable with respect to formation of silicates. Cross-sectional transmission electron micrographs expose formation of nodules, identified as silicides, across the polysilicon/ZrO2/Si interfaces but not for the interfaces with HfO2. For both ZrO2 and HfO2, the X-ray photoemission spectra illustrate formation of silicate-like compounds in the MO2/SiO2 interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 716: Symposium B – Silicon Materials-Processing, Characterization, and Reliability , 2002 , B3.2
Copyright
Copyright © Materials Research Society 2002

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