Hostname: page-component-cd9895bd7-jn8rn Total loading time: 0 Render date: 2024-12-27T02:43:28.423Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermodynamic and Experimental Study of β-FeSi2 Lpcvd

Published online by Cambridge University Press:  03 September 2012

Y. Morand ,
E. Blanquet ,
N. Bourhila ,
N. Thomas ,
C. Bernard ,
R. Madar  and
L.T.P.C.M. Enseeg
Y. Morand
Affiliation:
L.M.G.P.BNSPG, Domaine Universitaire, BP 46, 38402 Saint Martin d'Hères Cedex, France
E. Blanquet
Affiliation:
Domaine Universitaire, BP 75, 38402 Saint Martin d'Hères Cedex, France
N. Bourhila
Affiliation:
Domaine Universitaire, BP 75, 38402 Saint Martin d'Hères Cedex, France
N. Thomas
Affiliation:
Domaine Universitaire, BP 75, 38402 Saint Martin d'Hères Cedex, France
C. Bernard
Affiliation:
Domaine Universitaire, BP 75, 38402 Saint Martin d'Hères Cedex, France
R. Madar
Affiliation:
L.M.G.P.BNSPG, Domaine Universitaire, BP 46, 38402 Saint Martin d'Hères Cedex, France
L.T.P.C.M. Enseeg
Affiliation:
Domaine Universitaire, BP 75, 38402 Saint Martin d'Hères Cedex, France
Get access

Abstract

Thin films of semiconducting iron sulicide β-FeSi2 have been synthetized by Low Pressure Chemical Vapor Deposition in a cold wall reactor, starting from iron chloride and silane. Optimum experimental conditions for both iron chlorination and iron disilicide deposition have been determined by classical thermodynamic calculations. Despite the narrow range of as predicted deposition parameters, it has been possible to obtain mirror like thin films of pure polycrystalline β-FeSi2 on SiO2 substrate. The structural characteristics of the as deposited layers observed by SEM, ABS and RBS are presented together with their electronic properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993 , 91
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Dusausoy, Y., Protas, J., Wandji, R., and Roques, B., Acta Crystallogr. B27, 1209 (1971).Google Scholar
[2] Dimitriadis, C.A., Werner, J.H., Logothedis, S., Stutzmann, M., Weber, J. and Nesper, R., J. Appl. Phys., 68, 1726 (1990).Google Scholar
[3] Cherief, N., D'Anterroches, C., Cinti, R.C., Nguyen Tan, T.A., and Derrien, J., Appl. Phys.Lett. 55 (16), 1671 (1989).Google Scholar
[4] Dimitriadis, C.A. and Werner, J.H., J. Appl. Phys. 68, 93 (1990).Google Scholar
[5] Lefki, K., Muret, P., Cherief, N., and Cinti, R.C., J. Appl. Phys. 69, 352 (1991).Google Scholar
[6] Mahan, John B., Geib, Kent M., Robinson, G.Y., Long, Robert G., Xinghua, Yan, Bai, Gang, Marc-A. Nicolet, and Menachem Nathan, AppI. Phys. Lett. 56 (21), 2126 (1990).Google Scholar
[7] Regolini, J.L., Trincat, F., Berbezier, I., and Shapira, Y., AppI. Phys. Lett. 60 (8), 956 (1992).Google Scholar
[8] Blanquet, B., Vahlas, C., Bernard, C., Madar, R., Palleau, J. and Torres, J., J. de Physique C5, (50), 557 (1989).Google Scholar
[9] Ducarroir, M., Jaymes, M., Bernard, C. and Deniel, Y., J. Less Common Met. 40, 173 (1975).Google Scholar
[10] Barbier, J.N. and Bernard, C. in Proceedings of the 15th Calphad Meeting, edited by. Kaufman, L., pp. 206, (1986). [111] IRSID Database, France.Google Scholar
[12] Thomas, N., Suryanarayana, P., Blanquet, B., Vahias, C., Madar, R., and Bernard, C., J. Electro. Soc. 140, n°2 (1993).Google Scholar