Hostname: page-component-745bb68f8f-f46jp Total loading time: 0 Render date: 2025-02-10T07:52:04.037Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermodynamic Analysis of Impurities in the Sublimation Growth of AlN Single Crystals

Published online by Cambridge University Press:  01 February 2011

Li Du  and
James H Edgar
Li Du
Affiliation:
[email protected], Kansas State University, Chemical Engieering, Kansas State University, Department of Chemical Engineering, 105 Durland Hall, Manhattan, KS 66506, Manhattan, KS, 66502, United States
James H Edgar
Affiliation:
[email protected], Kansas State University, Manhattan, KS, 66502, United States
Get access

Abstract

The vapor phase species responsible for the transport of impurities in the sublimation-recondensation growth of bulk AlN crystals was predicted by thermodynamic analysis. AlN powder containing oxygen was investigated in Al-O-N system for an inert reactor. Dialuminum monoxide (Al2O) is strongly favored over all other possible oxygen containing species including NO and NO2. For AlN crystal growth in a graphite furnace, the Al-O-C-N system was studied. CO is the main species containing carbon and oxygen, and has a partial pressure more than one hundred times higher than all other carbon or oxygen containing species. Its partial pressure even exceeds that of Al vapor. Pure AlN growth on SiC seed was represented in the Al-N-Si-C system. SiC is not stable at high temperatures, the presence of nitrogen accelerates the decomposition of the SiC, and the most probable volatile silicon and carbon species originating from the SiC seed are Si, CN and C2N2.

Keywords

crystal growthIII-Vnitride
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I11-05
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ambacher, O., J. Appl. Phys. 31, 2653 (1998)Google Scholar
2. Kakanakova, A., Gueprguiev, G.K., Yakimova, R. and Janzen, E., J. Appl. Phys. 96, 5293 (2004)Google Scholar
3. Fukuyama, H., Kusunoki, S., Hakomori, A., and Hiraga, K., J. Appl. Phys. 100, 024905 (2006)Google Scholar
4. Boguslawski, P. and Bernholc, J., Phys. Rev. B 56, 9496(1997)Google Scholar
5. Park, C. H. and Chadi, D. J., Phys. Rev. B 55, 12995(1997)Google Scholar
6. Gorczyca, I., Svane, A., and Christensen, N. E., Phys. Rev. B 60,8147 (1999)Google Scholar
7. Stampfl, C. and Van de Walle, C. G., Phys. Rev. B 65, 155212(2002)Google Scholar
8. NIST-JANAF Thermochemical Tables, 4th ed., Chase, M. W., Jr. Am. Chem. Soc., DC, 1998, Am. Inst. Phys., NY, 1998, the NIST, Gaithersburg, MD 1998.Google Scholar
9. Saito, N., Ishizaki, C., Ishizaki, K., J. Ceram. Soc. Jan. 102, 299 (1994)Google Scholar