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Thermodynamic Analysis of Blanket and Selective Epitaxy of Sic on Si and SiO2 Masked Si

Published online by Cambridge University Press:  10 February 2011

Y. Gao  and
J. H. Edgar
Y. Gao
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan, Kansas 66506-5102
J. H. Edgar
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan, Kansas 66506-5102
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Abstract

Thermodynamic analysis was conducted to determine the conditions necessary for the selective epitaxial growth (SEG) of SiC on SiO2 masked Si substrates, and these results were compared to blanket SiC epitaxy on plain Si. For blanket SiC epitaxy, proper deposition conditions leading to single phase SiC without Si or graphite codeposition were found. For SiC SEG, the additional constraint that no significant SiO2 mask etching should occur, was considered. Taken in combination, both the SiC deposition and the Si0 2 etching processes were analyzed to ensure meaningful subsequent experiments. All process parameters, i.e., temperature, C/Si, CI/Si and H2/Si in the gas mixture significantly affect the growth conditions when epitaxy is possible. Either providing more carbon than silicon in the gas sources or adding HCl helps to suppress Si codeposition. For SiC SEG, lower deposition temperature (e.g. less than 1400 K) should be used to avoid damaging the SiO2 mask.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 735
Copyright
Copyright © Materials Research Society 1997

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References

1. Edgar, J. H., J. Mater. Res. 7, 235 (1992).Google Scholar
2. Davis, R. G., Kelner, G., Shur, M., Palmour, J. W., and Edmond, J. A., IEEE Proc. 79, 677 (1991).Google Scholar
3. Ginsberg, B. J., Burghartz, J., Bronner, G. B., and Mader, S. R., IBM J. Res. Develop. 34 (6), 816 (1990).Google Scholar
4. Nishino, S., Takahashi, K., Ishida, H., and Saraie, J., in Amorphous and Crystalline Silicon Carbide IV, edited by Yang, C. Y., Rahman, M.M. and Harris, G. L. (Springer Proceedings in Physics, Vol.71, Springer-Verlag, Berlin, 1992), pp. 411–416.Google Scholar
5. Oshita, Y. and Ishitani, A., J. Appl. Phys. 66, 4435 (1989).Google Scholar
6. Oshita, Y., Appl. Phys. 57, 605 (1990).Google Scholar
7. Goulding, M. R., Mater. Sci. Eng. B17, 47 (1993).Google Scholar
8. Fischman, Gary Y. and Petuskey, William T., J. Am. Ceram. Soc. 68, 185 (1985).Google Scholar
9. Allendorf, Mark D. and Melius, Carl F., J. Phys. Chem. 97 (3), 720 (1993).Google Scholar
10. Gaynor, Wayne and Takoudis, Christos G., in Eleventh International Conference on Chemical Vapor Deposition, edited by Spear, K.E. and Cullen, G.W. (Electrochem. Society, Pennington, NJ, 1990) p. 354.Google Scholar
11. Reynolds, W. C., The Element Potential Method for Chemical Equilibrium Analysis: Implementation in the Interactive Program STANJAN, Dept. of Mech. Eng., Stanford Univ. 1986.Google Scholar
12. Kyle, B. G., Chemical and Process Thermodynamics, 2nd ed., Prentice Hall, New Jersey, 1992, p. 424.Google Scholar
13. JANAF Thermochemical Tables, Natl. Stand. Ref. Data. Ser. (U. S. Natl. Bur. Stand.), 2nd ed., 37 (1971).Google Scholar
14. Goulding, M.R., Journal de Physique IV, Colloque C2, suppI. Au Journal de Physique II, Vol.1, C2–745 (1991).Google Scholar