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Thermodynamic Analysis and Purification for Source Materials in Sublimation Crystal Growth of Aluminum Nitride

Published online by Cambridge University Press:  31 January 2011

Li Du  and
James Edgar
Li Du
Affiliation:
[email protected]
James Edgar
Affiliation:
[email protected], Kansas State University, Chemical Engineering, Manhattan, Kansas, United States
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Abstract

Source material purification according to a thermodynamic analysis is reported for the sublimation crystal growth of aluminum nitride in an inert reactor. OAlOH is strongly favored over all other possible oxygen containing compounds in both the Al-O-H-N and Al-O-H-C-N systems, while Al2O, proved to be the most favorable oxygen containing gas species for Al-O-N system in previous study, become secondary favorable gas species. A low temperature (<1200 °C) treatment is effective in eliminating oxygen and hydrogen from the source powder. Carbon monoxide is another important oxygen containing gas species in the Al-O-H-C-N system, and is favored over Al2O at certain temperature and pressure. Carbothermal reduction with intentionally added carbon (graphite) can further reduce the oxygen concentration. Experiments show that high-temperature sintering minimizes the oxygen concentration and reduces the specific surface area of the source. With only 5.5% of mass loss, the purification produced a source with low O, H, and C concentrations of 0.018 wt%, 6ppm, and 0.006wt%.

Keywords

III-Vcrystal growthsintering
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1202: Symposium I – III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions , 2009 , 1202-I05-08
Copyright
Copyright © Materials Research Society 2010

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References

1 Miyanaga, M., Mizuhara, N., Fujiwara, S., Shimazu, M., Nakahata, H., Kawase, T., J. Crystal Growth 300 (2007) 45.Google Scholar
2 Wafers, K., Bell, C., Oxides and hydroxides of aluminum, Alcoa Technical Paper no. 19, Alcoa Research Laboratories.Google Scholar
3 Li, J., Nakamyra, M., Shirai, T., Matsumary, K., Ishizaki, C., and Ishizaki, K., J. Am. Ceram. Soc., 89[3] 937–943 (2006)Google Scholar
4 Panchula, M.L., Ying, J.Y., J. Am. Ceram. Soc. 86 (2003) 1114.Google Scholar
5 Edgar, J., Du, L., Nyakiti, L. L., Chaudhuri, J., J. Crystal Growth 310 (2008) 4002–4006 Google Scholar
6 Fukuyama, H., Kusunoki, S., Hakomori, A., and Hiraga, K., J. Appl. Phys. 100, 024905 (2006)Google Scholar
7 Nakaoa, Wataru, Fukuyama, Hiroyuki, J. Crystal Growth 259 (2003) 4001–4006, 302-308Google Scholar
8 NIST-JANAF Thermochemical Tables, 4th ed., M. W. Chase, Jr. Am. Chem. Soc., DC, 1998, Am. Inst. Phys., NY, 1998, the NIST, Gaithersburg, MD 1998.Google Scholar
9 Du, L. and Edgar, J.H., Mater. Res. Soc. Symp. Proc. 955 111–05 (2007).Google Scholar