No CrossRef data available.
Published online by Cambridge University Press: 15 February 2011
From a model for the thermodiffusion of high density plasmas an electronic mechanism for plasma self-confinement is derived. Due to the increase of the confinement densities with the density of states masses this effect should be most important in laser annealing experiments in Si but much weaker in GaAs. A fast diffusion of the surface generated plasma is found to enhance the impact ionization rate.