Hostname: page-component-cd9895bd7-gvvz8 Total loading time: 0 Render date: 2024-12-27T02:36:06.832Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermionic Field Emission Transport at Nanowire Schottky Barrier Contacts

Published online by Cambridge University Press:  16 June 2015

Kan Xie ,
Steven Allen Hartz  and
Virginia M. Ayres
Kan Xie
Affiliation:
Department of Electrical and Computer Engineering, Michigan State University, East Lansing, MI 48824, USA
Steven Allen Hartz
Affiliation:
Department of Electrical and Computer Engineering, Michigan State University, East Lansing, MI 48824, USA
Virginia M. Ayres
Affiliation:
Department of Electrical and Computer Engineering, Michigan State University, East Lansing, MI 48824, USA
Get access

Abstract

The high carrier concentrations typically reported for nanowire devices indicate that when Schottky barrier transport is present, it occurs in the thermionic field emission regime with a substantial but not exclusive tunneling component. Analysis by thermionic field emission is difficult due to its multivariate nature. In recent work, we developed a mathematical stability approach that greatly simplified the evaluation of the multivariate thermionic field emission parameters. This is a general method with potentially wide applicability, requiring only the effective mass m* and relative dielectric constant εr for a given semiconductor as inputs. In the present work, we investigate the influence of the materials properties effective mass m* and relative dielectric constant εr on stability for a range of real and simulated semiconductor nanowires. A further investigation of temperature sensitivity and regime trends is presented.

Keywords

thermionic emissionelectrical propertiesnanoscale
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1785: Symposium S – Semiconductor Nanowires and Devices for Advanced Applications , 2015 , pp. 19 - 25
Copyright
Copyright © Materials Research Society 2015 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Xie, K.; Hartz, S. A.; Ayres, V. M.; Jacobs, B. W.; Ronningen, R. M.; Zeller, A. F.; Baumann, T.; Tupta, M. A. Materials Research Express 2015, 2, (1), 015003.CrossRefGoogle Scholar
Anderson, E. E., Modern Physics and Quantum Mechanics. Saunders: Philadelphia, 1971; p xi, 430 p.Google Scholar
Zhang, Z. Y.; Jin, C. H.; Liang, X. L.; Chen, Q.; Peng, L. M. Appl Phys Lett 2006, 89, (3), 073102(3pp).Google Scholar
Crowell, C. R.; Rideout, V. L. Solid State Electron 1969, 12, (2), 89–105.CrossRefGoogle Scholar
Huang, Y.; Duan, X. F.; Cui, Y.; Lieber, C. M. Nano Lett 2002, 2, (2), 101–104.CrossRefGoogle Scholar
Wen, J.; Zhang, X. T.; Gao, H.; Wang, M. J. J Appl Phys 2013, 114, (22), 223713(10pp).CrossRefGoogle Scholar
Wallentin, J.; Ek, M.; Wallenberg, L. R.; Samuelson, L.; Borgstrom, M. T. Nano Lett 2012, 12, (1), 151–155.CrossRefGoogle Scholar
Jung, H.; Park, D. Y.; Xiao, F.; Lee, K. H.; Choa, Y. H.; Yoo, B.; Myung, N. V. J Phys Chem C 2011, 115, (7), 2993–2998.CrossRefGoogle Scholar