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Thermally-Assisted Pulsed-Laser Annealing of SOS

Published online by Cambridge University Press:  15 February 2011

Masayoshi Yamada ,
Ken-Ichi Yamazaki ,
Hisakazu Kotani ,
Keiichi Yamamoto  and
Kenji Abe
Masayoshi Yamada
Affiliation:
Department of Electronics, Faculty of Engineering, Kobe University Rokkodai, Nada, Kobe 657, Japan
Ken-Ichi Yamazaki
Affiliation:
Department of Electronics, Faculty of Engineering, Kobe University Rokkodai, Nada, Kobe 657, Japan
Hisakazu Kotani
Affiliation:
Department of Electronics, Faculty of Engineering, Kobe University Rokkodai, Nada, Kobe 657, Japan
Keiichi Yamamoto
Affiliation:
Department of Electronics, Faculty of Engineering, Kobe University Rokkodai, Nada, Kobe 657, Japan
Kenji Abe
Affiliation:
Department of Electronics, Faculty of Engineering, Kobe University Rokkodai, Nada, Kobe 657, Japan
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Abstract

Thermally-assisted pulsed-laser annealing has been performed on ion-implanted silicon-on-sapphire(SOS) by irradiating Q-switched(20 nsec) ruby laser light during thermally heating. Raman scattering measurements have been made to estimate the residual strain of the annealed SOS. It was observed that Raman shift of SOS annealed in the temperature range of 400°C to 500°C was very close to that of single crystal silicon and the depolarization factor(the Raman intensity ratio of allowed z(xy)z to forbidden z(xx)z scattering configuration) was infinite, while Raman shift of SOS annealed at room temperature was shifted down to about 5 cm-1 and the depolarization factor was finite. It was found that the residual strain of SOS was relieved by the thermally-assisted pulsed-laser annealing, but the residual strain of SOS annealed at room temperature was inhomogeneous and attained to 7×10−3. The annealing temperature dependences of the residual strains were not explained well with a strictly thermal melting and recrystallization model in conjunction with the thermal expansion difference between silicon and sapphire, and suggested to need a new model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 503
Copyright
Copyright © Materials Research Society 1981

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