Hostname: page-component-78c5997874-mlc7c Total loading time: 0 Render date: 2024-11-19T08:35:01.698Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermally Induced Stresses in Passivated Thin Films and Patterned Lines of AlSiCu

Published online by Cambridge University Press:  22 February 2011

U. Burges ,
H. Helneder ,
H. KÖrner ,
H. Schroeder  and
W. Schilling
U. Burges
Affiliation:
Siemens AG HL PES, Otto-Hahn-Ring 6, D-81739 München, Germany
H. Helneder
Affiliation:
Siemens AG HL PES, Otto-Hahn-Ring 6, D-81739 München, Germany
H. KÖrner
Affiliation:
Siemens AG HL PES, Otto-Hahn-Ring 6, D-81739 München, Germany
H. Schroeder
Affiliation:
IFF, Forschungszentrum Jilich, D-52425 Jülich, Germany
W. Schilling
Affiliation:
IFF, Forschungszentrum Jilich, D-52425 Jülich, Germany
Get access

Abstract

A bending beam technique was used to measure the mechanical stresses in AlSi(l%)Cu(0.5%) blanket films as well as in patterned lines (aspect ratio: 0.8) - unpassivated and passivated with SiNx - during thermal cycling from –170°C or room temperature to 450°C.

Main results are:

a) No significant differences in unpassivated and passivated blanket films with thickness ranging from 0.2 µm to 3.2 µm.

b) In unpassivated patterned lines of 0.8 µm thickness the stresses across the lines are very small, while parallel to the lines they show nearly elastic behaviour, except at high temperatures.

c) In passivated patterned lines the stresses are much higher than in blanket films, very similar parallel and across the line and nearly elastic. The stress relaxation is small compared with blanket films and depends strongly on the temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 338: Symposium – Materials Reliability in Microelectronics IV , 1994 , 247
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Pill-Kaufmann, W., Berichte des Forschungszentrums Jiilich, JUL-2436 (1991)Google Scholar
[2] Flinn, P., Gardner, D., Nix, W.D., IEEE Trans Electron Dev., ED–34, 689 (1987)Google Scholar
[3] Tezaki, A., Mineta, T., Egawa, H.; IEEE/IRPS (1990) 221–229 Google Scholar
[4] Besser, P.R., Mack, A. Sauter, Fraser, D. and Bravman, J.C., Mat. Res. Soc. Symp. Proc. Vol. 309, 287 (1993)Google Scholar
[5] Brenner, A., Senderoff, S., J. of Research of the NBS, 42 (1949) 105–23Google Scholar
[6] Hsueh, C.H., Evans, A.G., J. Am. Soc., 68 (1985), 241–48Google Scholar
[7] Burges, U., Schroeder, H., Schilling, W., Trinkaus, H., to be publishedGoogle Scholar
[8] Lubahn, J.B., “Plasticity and Creep of Metals”, John Wiley, London-NY Google Scholar
[9] Flinn, P. A. and Chiang, Ch., J. Appl. Phys. 67, 2927 (1990)Google Scholar
[10] Moske, M.A., Ho, P.S., Mikalsen, D.J., Cuomo, J.J. and Rosenberg, R., J. Appl. Phys. 74, 1716 and 1725 (1993)Google Scholar
[11] Paszkiet, C.A., Korhonen, M.A., and Li, Che-Yu, Mat. Res. Soc. Symp. Proc. Vol. 225, 161 (1991)Google Scholar
[12] Sauter, A. I., Nix, W.D., Mat. Res. Soc. Symp. Proc. Vol. 188, 1990, MRSGoogle Scholar
[13] Besser, P.R., Venkatraman, R., Brennan, S., and Bravman, J., MRS Symp. Proc. Vol. 239, 233 (1992)Google Scholar
[14] Korhonen, M.A., Black, R.D., Li, Che-Yu, J. Appl. Phys. 69 (3) (1991)Google Scholar
[15] Besser, P.R., Marieb, Th. N., Bravman, J.C., MRS Proc. Vol. 309, 181 (1993)Google Scholar