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Thermal Wave and Lightscattering Measurements on Differently Processed Si-Wafers
Published online by Cambridge University Press: 28 February 2011
Abstract
Subsurface damage and surface roughness is determined on silicon wafers by using thermal wave and lightscattering measurements. A comparison with the dielectric breakdown behaviour of thin oxides proves the deleterious influence of a rough Si/SiO2 interface on the breakdown voltage. Subsurface damage on the other hand lowers the breakdown voltage only in connection with surface roughness.
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- Copyright © Materials Research Society 1989
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