Hostname: page-component-cd9895bd7-jkksz Total loading time: 0 Render date: 2024-12-27T02:39:56.489Z Has data issue: false hasContentIssue false

Thermal Stabilization of Non-Stoichiometric GaAs through Beryllium Doping

Published online by Cambridge University Press:  10 February 2011

R.C. Lutz
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
P. Specht
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
R. Zhao
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
S. Jeong
Affiliation:
Department of Physics, University of California, Berkeley, CA 94720
J. Bokor
Affiliation:
Department of Electrical Engineering and Computer Science, University of California, Berkeley, CA 94720
E.R. Weber
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA 94720
Get access

Abstract

Beryllium-doped, non-stoichiometric GaAs grown by MBE at low temperatures appears superior to its undoped counterpart in several key areas vital to device manufacturing. X-ray diffraction studies have indicated that material grown above 275°C shows complete thermal stability to annealing at temperatures up to 600°C. This behavior is ascribed in part to strain compensation between the small beryllium atoms and the large arsenic antisites. Consequently, outdiffusion of excess arsenic from the non-stoichiometric material into neighboring layers upon annealing or subsequent high temperature growth is expected to be negligible. Short carrier lifetime (<1 psec) and high resistivity (>104 Ω-cm) have been observed in the same as-grown material. Sub-picosecond lifetimes have been measured previously in undoped material, but the low growth temperatures required produce a supersaturation of antisites allowing for significant hopping conductivity through the defect band in as-grown material, and significant arsenic outdiffusion upon annealing. Due to electrical compensation of antisites by beryllium acceptors, materials in which the ionized antisites represent a major fraction of a relatively small total antisite concentration are now made possible by proceeding to higher growth temperatures. Thus, nonstoichiometric GaAs having a beneficial combination of thermal stability, short carrier lifetime and high resistivity can be fabricated

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Liu, X., Prasad, A., Nishio, J., Weber, E.R., Liliental-Weber, Z. and Walukiewicz, W., Appl. Phys. Lett. 72, 1850 (1992).Google Scholar
2. Specht, P., Jeong, S., Sohn, H., Luysberg, M., Prasad, A., Gebauer, J., Krause-Rehberg, R. and Weber, E.R., Mater. Sci. Forum 258–263 (951 (1997).Google Scholar
3. Liliental-Weber, Z., Mater. Res. Soc. Symp. Proc. 198, 371 (1990).Google Scholar
4. Melloch, M.R., Otsuka, N., Woodall, J.M., Warren, A.C. and Freeouf, J.L., Appl. Phys. Lett. 57, 1531 (1990).Google Scholar
5. Liu, X., Prasad, A., Chen, W.M., Kurpiewski, A., Stoschek, A., Liliental-Weber, Z. and Weber, E.R., Appl. Phys. Lett. 65, 3002 (1994).Google Scholar
6. Lin, B. J.-F., Kocot, C.P., Mars, D.E. and Jaeger, R., IEEE ED 37, 46 (1990).Google Scholar
7. Gupta, S., Whitaker, J.F. and Moreau, G.A., IEEE J. Quantum Electron. 28, 2464 (1992).Google Scholar
8. Look, D.C., Walters, D.C., Manasreh, M.O., Sizelove, J.R., Stutz, C.E. and Evans, K.R., Phys. Rev. B 42 3578 (1990).Google Scholar
9. Weber, E.R., Ennen, H., Kaufmann, U., Windscheif, J., Schneider, J. and Wosinski, T., J. Appl. Phys. 53, 6140 (1982).Google Scholar
10. Liliental-Weber, Z., Ager, J. III, Look, D., Lin, X.W., Liu, X., Nishio, J., Nichols, K., Schaff, W., Swider, W., Wang, K., Washburn, J., Weber, E.R. and Whitaker, J., Proc. of the 8'h Conf. On Semi-insulating Materials, ed. By Godlewski, M. (World Scientific, 1994). P. 305.Google Scholar