Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-29T07:49:11.209Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermal Stability of the Structural and Electronic Properties of Strain Symmetrized Sim Gen Superlattices and Ungraded, Nearly Relaxed Si1−x Gex

Published online by Cambridge University Press:  25 February 2011

P. A. Dafesh ,
P. M. Adams ,
V. Arbet-Engels  and
K. L. Wang
P. A. Dafesh
Affiliation:
The Aerospace Corporation, Mail Station Ml/109, P.O. Box 92957, Los Angeles, CA 90009
P. M. Adams
Affiliation:
The Aerospace Corporation, Mail Station Ml/109, P.O. Box 92957, Los Angeles, CA 90009
V. Arbet-Engels
Affiliation:
Device Research Laboratory, Electrical Engineering Department, 56–1256 Engr. IV Univ. of California, Los Angeles, CA 90024.
K. L. Wang
Affiliation:
Device Research Laboratory, Electrical Engineering Department, 56–1256 Engr. IV Univ. of California, Los Angeles, CA 90024.
Get access

Abstract

In this study, photoreflectance (PR) spectroscopy and x-ray rocking curves measurements were used to study the variation in strain configuration, defect propagation, structural properties and direct electronic transition energies in Sim Gen superlattices (SL) and nearly relaxed Si1−x Gex buffer layers grown on < 100 > Si as a function of annealing temperature. The in-plane (a│) and perpendicular (a┴) lattice constants of the alloy buffer layers are found to vary only slightly with anneal temperature, TA, up to a temperature To. For TA To, the in-plane strain changed from roughly zero a│ ≈ a┴ (relaxed) or a┴ > a│ (compressive) to a┴ > a│ (tensile). This change in strain configuration is believed to be caused by the difference in thermal expansion coefficients between the epilayer and the Si substrate. The anneal temperature T0 is also correlated with the disappearance of higher order x-ray harmonics from the SL. This point was also correlated with a large energy shift and broadening of the PR spectra from the SL. The shift in energy of the PR spectra is explained in terms of the interdiffusion of Si and Ge at SL heterointerfaces, and to a lesser degree, the strain induced by the above mentioned difference in thermal expansion coefficients. The PR spectra of the alloy E0 transitions are also observed to shift to higher energy with increasing TA.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 439
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

VII. REFERENCES

[1] Yang, C. I. and Pan, D. S.. J. Appl. Phys., 64, 1573, 1988.Google Scholar
[2] Tsaur, Bor-Yeu, Chen, C. K. and Marino, S. A.. IEEE Electron Device Lett., 12, 293, 1991.Google Scholar
[3] Hertle, H., Shubert, G., Garnik, E., Abstreiter, G and Schäffier, F.. Mat. Res. Soc. Symp. Proc., 220, 379, 1991.Google Scholar
[4] Karunasiri, R. P. G., Park, J. P. and Wang, K. L.. Appl. Phys. Lett., 59, 2588, 1991.Google Scholar
[5] Park, J. S., Karunasiri, R. P. G. and Wang, K. L.. Appl. Phys. Lett., 60, 103, 1992.Google Scholar
[6] Luryi, S., Pearsall, T. P., Temkin, H. and Bean, J. C.. IEEE Electron Device Lett., EDL–7, 104, 1986.Google Scholar
[7] Gell, M. A.. Phys. Rev., B40, 1966, 1989.Google Scholar
[8] Dafesh, P. A., Arbet, V. and Wang, K. L.. Appl. Phys. Lett., 56, 1498, 1990.Google Scholar
[9] Gell, M. A., Herman, M. H., Ward, I. D., Gibbings, C. J., Jones, M. E., Tuppen, C. J., Churchill, A. C. and Klipstein, P. C.. Vacuum, 41, 947, 1990.Google Scholar
[10] Chang, S. J., Arbet, V., Wang, K. L., Bowman, R. C. Jr, Adams, P. M., Nayak, D. and Woo, J. C. S.. J. of Elect. Mat., 19, 125, 1990.Google Scholar
[11] Baribeau, J. M.. Appl. Phys. Lett., 57, 1502, 1990.Google Scholar
[12] Dafesh, P. A., Arbet, V. and Wang, K. L.. In Pollak, F. H., Cardona, M., Aspnes, D. E., editor, Proc. SPIE International Conference on Modulation Spectroscopy, 1286, 308, 1990.Google Scholar
[13] Fatemi, M. and Stahlbush, R. E.. Appl. Phys. Lett., 58, 825, 1991.Google Scholar
[14] Aspnes, D. E. and Rowe, J. E.. Phys. Rev. Lett., 27, 188, 1971.Google Scholar
[15] Sze, S. M.. Physics of Semiconductor Devices. John Wiley & Sons, New York, 1981.Google Scholar