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Thermal Stability of Strained InGaAs/GaAs Single Quantum Wells

Published online by Cambridge University Press:  28 February 2011

B. Elman ,
Emil S. Koteles ,
P. Melman ,
C.A. Armiento  and
C. Jagannath
B. Elman
Affiliation:
GTE Laboratories Incorporated, Waltham, MA 02254
Emil S. Koteles
Affiliation:
GTE Laboratories Incorporated, Waltham, MA 02254
P. Melman
Affiliation:
GTE Laboratories Incorporated, Waltham, MA 02254
C.A. Armiento
Affiliation:
GTE Laboratories Incorporated, Waltham, MA 02254
C. Jagannath
Affiliation:
GTE Laboratories Incorporated, Waltham, MA 02254
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Abstract

We present a study of the structural stability of InGaAs/GaAs strained single quantum wells (SQW) grown with a variety of indium compositions and with well widths close to critical thickness values. The samples were grown by molecular beam epitaxy and were subjected to furnace annealing as well as ion implantation followed by rapid thermal annealing. Changes in low temperature photoluminescence linewidths were used to evaluate the stability of strained SQWs. We observed both strain relief, in wide SQWs and strain recovery, in higher indium composition narrow quantum wells which were partially relaxed (low dislocation density) as-grown.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 135
Copyright
Copyright © Materials Research Society 1990

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