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Thermal Stability of EL2 in GaAs

Published online by Cambridge University Press:  26 February 2011

X. Boddaert ,
X. Letartre ,
D. Stievenard  and
J. C. Bourgoin
X. Boddaert
Affiliation:
Laboratoire de Physique des Solides, UA 253, ISEN 41, Bd Vauban, 59046 LILLE (France)
X. Letartre
Affiliation:
Laboratoire de Physique des Solides, UA 253, ISEN 41, Bd Vauban, 59046 LILLE (France)
D. Stievenard
Affiliation:
Laboratoire de Physique des Solides, UA 253, ISEN 41, Bd Vauban, 59046 LILLE (France)
J. C. Bourgoin
Affiliation:
Groupe de Physique des Solides de l'Ecole Normale Supérieure Université de Paris 7, Tour 23, 2 Place Jussieu, 75256 Paris (France)
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Abstract

Different samples originating from the same LEC ingot have been used in order to determine the variation of the EL2 concentration versus depth after different types of thermal annealing ( 450 and 850°C : the temperatures generally used in technological processes ). The annealing of EL2 near the surface at 850°C has been interpreted as the result of the deviation from the stoichiometry near the surface, due to [As] variation induced by vacancy diffusion. At 450°C, the annealing of EL2 can only be explained by the dissociation of a complex, followed by the migration of one of the constituants, confirming that the EL2 defect is the complex AsGa- Asi.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 3
Copyright
Copyright © Materials Research Society 1989

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References

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