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Thermal Stability of a-SiNx:H Films

Published online by Cambridge University Press:  22 February 2011

V.Kh. Kudoyargva ,
A. A. Aivazov ,
B. G. Budaguan  and
I. V. Filatova
V.Kh. Kudoyargva
Affiliation:
A.F. Ioffe Physical Technical Institute, St. Petersburg, Russia
A. A. Aivazov
Affiliation:
Moscow Institute of Electronic Technology, Zelenograg, Russia
B. G. Budaguan
Affiliation:
Moscow Institute of Electronic Technology, Zelenograg, Russia
I. V. Filatova
Affiliation:
Moscow Institute of Electronic Technology, Zelenograg, Russia
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Abstract

The investigations of thermal stability of a-SiNx:H films (x≤0.4) have xbeen performed bv both IR spectroscopy and DTA techniques. The properties of samples with x≤0.06 were attentively considered because in this case the nitrogen may be treated as an impurity in a-Si:H. It has been shown that controlled nitrogen doping (up to 0.5 Pa NH3) can be used as an effective technique for thermostabilization of a-Si:H properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 127
Copyright
Copyright © Materials Research Society 1993

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References

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