Hostname: page-component-cd9895bd7-dzt6s Total loading time: 0 Render date: 2024-12-27T01:58:57.215Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermal Stability of a-C:F,H Films Deposited by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition

Published online by Cambridge University Press:  15 February 2011

Jeremy A. Theil ,
Francoise Mertz ,
Micah Yairi ,
Karen Seaward ,
Gary Ray  and
Gerrit Kooi
Jeremy A. Theil
Affiliation:
HP Laboratories, Hewlett-Packard Company, 3500 Deer Creek Road, Palo Alto, CA 94304
Francoise Mertz
Affiliation:
HP Laboratories, Hewlett-Packard Company, 3500 Deer Creek Road, Palo Alto, CA 94304
Micah Yairi
Affiliation:
HP Laboratories, Hewlett-Packard Company, 3500 Deer Creek Road, Palo Alto, CA 94304
Karen Seaward
Affiliation:
HP Laboratories, Hewlett-Packard Company, 3500 Deer Creek Road, Palo Alto, CA 94304
Gary Ray
Affiliation:
HP Laboratories, Hewlett-Packard Company, 3500 Deer Creek Road, Palo Alto, CA 94304
Gerrit Kooi
Affiliation:
HP Laboratories, Hewlett-Packard Company, 3500 Deer Creek Road, Palo Alto, CA 94304
Get access

Abstract

Amorphous carbon films grown with fluorohydrocarbons can be grown to have dielectric constant values around 2.0. The behavior of these films when subjected to thermal excursion is studied. We have investigated material deposited in an ECR plasma, and find that the F:H ratio of the gas mixture is a good guide to material properties. Films deposited at 5°C were placed in a vacuum chamber at 400°C as long as 60 minutes. The film thickness, dielectric constant, and infrared absorption spectrum change with the F:H ratio of the incoming gas and thermal cycling. It was found that the dielectric constant and loss tangent decrease upon heating and that there is an apparent increase in C=C groups. As expected, as the F:H ratio increases, the dielectric constant and thermal stability decrease. Good thermal stability is shown for F:H ratios of 1.5, which result in films with a dielectric constant of ∼2.4 after heating.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 476: Symposium N – Low-Dielectric Constant Materials III , 1997 , 31
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Oehrlein, G. S., Zhang, Y., Vender, D., and Haverlag, M., J. Vac. Sci, and Technol. A, 12, 323 (1994).Google Scholar
[2] Sze, S. M., VLSI Technology, McGraw-Hill Book Company, New York, 200 (1988).Google Scholar
[3] Rossnagel, S. M., Cuomo, J. J., Westwood, W. D. eds., Handbook of Plasma Processing Technology, Noyes Press, Park Ridge, 202 (1990).Google Scholar
[4] Grill, A., Patel, V., Cohen, S. A., Edelstein, D. C., Paraszczak, J. R., and Jahnes, C., Adv. Metall, and Intercon. Sys. for ULSI Appl, in 1996, MRS Conf. Proc., B12, 417 (1997).Google Scholar
[5] Endo, K., Tatsumi, T., J. Appl. Phys., 78, 1370(1995).Google Scholar
[6] Endo, K., and Tatsumi, T., MRS Symp. Proc., 381, 249 (1995).Google Scholar
[7] Grill, A., and Patel, V., Appl. Phys. Lett., 60, 2089 (1992).Google Scholar
[8] Endo, K., and Tatsumi, T., Appl. Phys. Lett., 68, 2864 (1996).Google Scholar
[9] Tobin, J. A., Li, G., Mahoney, L. T., Denton, D. D., and Shohet, J. L., presented at the 39th AVS National Symposium, Chicago, IL (1992).Google Scholar
[10] Szymanski, H., and Erikson, R., Infrared Band Handbook, 2nd Ed., IFI/Plenum, New York (1970).Google Scholar
[11] Pasto, D. J., Johnson, C. R., Chapter 4 in, Organic Structure Determination, Prentice Hall, Inc., Englewood Cliffs (1969).Google Scholar
[12] Wexler, A. S., Appl. Spectrosc. Rev., 1, 29 (1967).Google Scholar
[13] d'Agostino, R., Lamendola, R., Favia, P., and Giquel, A., J. Vac. Sci. and Technol. A, 12, 308 (1994).Google Scholar
[14] Roeges, N. P. G., A Guide to the Complete Interpretation of Infrared Spectra of Organic Structures, John Wiley and Sons, New York (1994).Google Scholar
[15] Arai, S., Tsujimoto, K., and Tachi, S., Jpn. J. Appl. Phys., 31, 2011 (1992).Google Scholar