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Thermal Pulse Annealing of Hg1−xCdxTe

Published online by Cambridge University Press:  15 February 2011

K. C. Dimiduk ,
W. G. Opyd ,
M. E. Greiner ,
J. F. Gibbons  and
T. W. Sigmon
K. C. Dimiduk
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305
W. G. Opyd
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305
M. E. Greiner
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305
J. F. Gibbons
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305
T. W. Sigmon
Affiliation:
Stanford Electronics Laboratories, Stanford, CA 94305
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Abstract

Thermal pulse annealing has been used to modify the near surface of Hg1−xCdxTe. Using anneals of approximately 260°C for seven seconds, the crystal quality of epitaxial HgCdTe surfaces can be improved as observed by MeV He+ ion channeling. Similar anneals have also been used to repair the damage resulting from a 250 keV, 101511 B/cm2 implant into HgCdTe held at LN2. For higher temperatures and/or longer anneals, surface Hg loss is observed. Rutherford Backscattering measurements are used to measure this loss. The resulting loss rate data is described by No= A exp (−ΔE/kT) where A and ΔE depend on the material composition with A = 1029, ΔE = 1.8 eV and A = 1036, ΔE = 2.6 eV for x = 0.23 and 0.4, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 671
Copyright
Copyright © Materials Research Society 1983

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Footnotes

a

Formerly under maiden name K. L. Conway.

b

Also with Lockheed Palo Alto Research Laboratory, Palo Alto, CA 94304.

References

REFERENCES

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