Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-25T18:02:15.484Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermal Nitridation of Silicon in Nitrogen Plasma and Nitrogen-Hydrogen Plasma

Published online by Cambridge University Press:  21 February 2011

S. Matsumoto ,
H. Nakamura ,
S. Eguchi ,
S. Fujita  and
A. Sasaki
S. Matsumoto
Affiliation:
Department of electrical engineering, Keio University, Hiyoshi, Yokohama, JAPAN 223
H. Nakamura
Affiliation:
Department of electrical engineering, Keio University, Hiyoshi, Yokohama, JAPAN 223
S. Eguchi
Affiliation:
Department of electrical engineering, Keio University, Hiyoshi, Yokohama, JAPAN 223
S. Fujita
Affiliation:
Department of electrical engineering, Kyoto University, Kyoto JAPAN 606
A. Sasaki
Affiliation:
Department of electrical engineering, Kyoto University, Kyoto JAPAN 606
Get access

Abstract

Thermal nitridation of silicon in both nitrogen and nitrogen-hydrogen plasma has been performed around 1000°C for 5 min to 10 hr. From Auger electron spectroscopy analysis, the formed films contain some oxygen and are identified as oxynitride films in both cases. In nitrogen-hydrogen plasma, high nitrogen fraction( 0.8) in the film is obtained for the nitridation of 5 min. Thus, the addition of hydrogen to nitrogen enhances the nitrgen fraction in the film for such a short nitridation time. The film thickness is almost constant against the nitridation time and is limited to be about 40 Å. Capacitance-voltage characteristics of aluminum gate metal- nitride-semiconductor capacitors show stable behaviors and the fixed charge density at the film-substrate interface is estimated to be the order of 1012 cm−2 in both cases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 38: Symposium F – Plasma Synthesis and Etching of Electronic Materials , 1984 , 461
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Ito, T., Hijiya, S., Nozaki, T., Arakawa, H., Shinoda, M. and Fukukawa, Y., J. Electrochem. Soc., 125, 448(1978).CrossRefGoogle Scholar
2. Ito, T., Nozaki, T., Arakawa, H. and Shinoda, M., Appl. Phys. Lett., 32, 330(1978).Google Scholar
3. Murarka, S. P., Chang, C. C. and Adams, A. C., J. Electrochem. Soc., 126, 996(1979).Google Scholar
4. Wu, C., King, C., Lee, M., Chen, C., J. Electrochem. Soc., 129, 1559(1982).Google Scholar
5. Hayafuji, Y. and Kajiwara, K., J. Electrochem. Soc., 129, 2102(1982).Google Scholar
6. Moslehi, M. M. and Saraswat, K. C., Proc. of The Symposium on “Silicon Nitride Thin Insulating Films”, ed by Kapoor, V. J. and Stein, H. J. (Electrochemical Society, 1983) p. 324.Google Scholar
7. Ito, T., Kato, I., Nozaki, T., Nakamura, T. and Ishikawa, H., Appl. Phys. Lett.,38, 370(1981).Google Scholar
8. Wong, S. S. and Oldham, W. G., Digest of Technical papers, Symposium on VLSI Technology, (Japan Society of Applied Physics, 1983) p. 88.Google Scholar
9. Chang, R. P. H., Chang, C. C., and Darak, S., Appl. Phys. Lett., 36, 999(1980).Google Scholar
10. Matsumoto, O. and Yatsuda, Y., Proc. of 5th International Symposium on Plasma Chemistry, 382(1981).Google Scholar
11. Giridhar, R. V. and Rose, K., Proc. of The Symposium on “Silicon Nitride Thin Insulating Films”, ed by Kapoor, V. J. and Stein, H. J.(Electrochemical Society, 1983) p. 312.Google Scholar
12. Chang, C. C., Surface Sci., 25, 53(1971).Google Scholar
13. Holloway, P. H. and Stein, H. J., J. Electrochem. Soc., 123, 723(1976).Google Scholar
14. Deal, B. E. and Grove, A. S., J. Appl. Phys., 36, 3770(1965).Google Scholar
15. Kraitchman, J., J. Appl. Phys., 38,4323(1967).Google Scholar