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Thermal Nitridation of Silicon in Active Nitrogen

Published online by Cambridge University Press:  21 February 2011

R. V. Giridhar  and
K. Rose
R. V. Giridhar
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
K. Rose
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
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Abstract

The dissociation of N2 in a microwave discharge has been studied using a gas phase titration between N(4S) and NO. SF6 added in small concentrations (20–100 ppm of N2) is shown to be an efficient catalyst for dissociating N2. Dissociation fractions [N]/[N2 ] of 4–5% have been obtained. The studies suggest how the partial pressure of atomic nitrogen can be maximized. These results have been applied to thermal nitridation of Si in active nitrogen. A strong dependence of the film thickness on the partial pressure of atomic nitrogen (PN) has been shown. In addition to the nitridation rate, the nitrogen fraction [N]/([N] + [O]) also increases with PN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 38: Symposium F – Plasma Synthesis and Etching of Electronic Materials , 1984 , 451
Copyright
Copyright © Materials Research Society 1985

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