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Thermal Mismatch Strain Relaxation Mechanisms and Hysteresis in Pb1−SnxSe-on-CaF2/Si Structures

Published online by Cambridge University Press:  15 February 2011

H. Zogg ,
P. Müller ,
A. Fach ,
J. John ,
C. Paglino  and
S. Teodoropol
H. Zogg
Affiliation:
AFIF at Swiss Federal Institute of Technology, ETH-Teil Technopark, CH-8005 Züirich, Switzerland, FAX +41 1 445 1499, e-mail [email protected]
P. Müller
Affiliation:
AFIF at Swiss Federal Institute of Technology, ETH-Teil Technopark, CH-8005 Züirich, Switzerland, FAX +41 1 445 1499
A. Fach
Affiliation:
AFIF at Swiss Federal Institute of Technology, ETH-Teil Technopark, CH-8005 Züirich, Switzerland, FAX +41 1 445 1499
J. John
Affiliation:
AFIF at Swiss Federal Institute of Technology, ETH-Teil Technopark, CH-8005 Züirich, Switzerland, FAX +41 1 445 1499
C. Paglino
Affiliation:
AFIF at Swiss Federal Institute of Technology, ETH-Teil Technopark, CH-8005 Züirich, Switzerland, FAX +41 1 445 1499
S. Teodoropol
Affiliation:
AFIF at Swiss Federal Institute of Technology, ETH-Teil Technopark, CH-8005 Züirich, Switzerland, FAX +41 1 445 1499
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Abstract

The strain induced by the thermal mismatch in Pbl−xSnxSe and other IV–VI compound layers on Si(111)-substrates relaxes by glide of dislocations in the main <110> {001}-glide system. The glide planes are arranged with 3-fold symmetry and inclined to the (111)-surface. Despite a high threading dislocation density (> 107 cm−2) in these heavily lattice mismatched structures, the misfit dislocations move easily even at cryogenic temperatures and after many temperature cycles between RT and 77K. The cumulative plastic deformation after these cycles is up to 500%! Despite a pronounced deformation hardening occurs, the structural quality of the layer is only slightly adversely affected as regards additional threading dislocations created. The interaction probability between these dislocations is estimated to be about 10−5.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 27
Copyright
Copyright © Materials Research Society 1995

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References

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