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THERMAL EXPANSION OF PHASE-CHANGE RANDOM ACCESS MEMORY CELLS

Published online by Cambridge University Press:  01 February 2011

Jianming Li ,
L.P. Shi ,
H.X. Yang ,
K.G. Lim ,
X.S. Miao ,
H.K. Lee  and
T.C. Chong
Jianming Li
Affiliation:
[email protected], Data Storage Institute, Data Storage Institute, DSI Building, 5, Engineering Drive 1, Singapore, 117608, Singapore, (65)68748407
L.P. Shi
Affiliation:
[email protected], Data Storage Institute, DSI Building, 5, Engineering Drive 1, Singapore, 117608, Singapore
H.X. Yang
Affiliation:
[email protected], Data Storage Institute, DSI Building, 5, Engineering Drive 1, Singapore, 117608, Singapore
K.G. Lim
Affiliation:
[email protected], Data Storage Institute, DSI Building, 5, Engineering Drive 1, Singapore, 117608, Singapore
X.S. Miao
Affiliation:
[email protected], Data Storage Institute, DSI Building, 5, Engineering Drive 1, Singapore, 117608, Singapore
H.K. Lee
Affiliation:
[email protected], Data Storage Institute, DSI Building, 5, Engineering Drive 1, Singapore, 117608, Singapore
T.C. Chong
Affiliation:
[email protected], Data Storage Institute, DSI Building, 5, Engineering Drive 1, Singapore, 117608, Singapore
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Abstract

Three-dimensional finite element method (FEM) is used to solve the thermal strain-stress fields of phase-change random access memory (PCRAM) cells. Simulation results show that thermal stress concentrates at the interfaces between electrodes and phase change layer and it is significantly larger than that within the phase change layer. It has been found that the peak thermal stress is linearly related to the voltage of electrical pulse in the reset process but once amorphous state is produced in the cell, a nonlinear relationship between thermal stress and electrical power exists. This paper reported the change of thermal stress during set process. It was found that the stress decreases significantly due to the amorphous active region during set processes.

Keywords

thermal stressessimulationmemory
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1072: Symposium G – Phase-Change Materials for Reconfigurable Electronics and Memory Applications , 2008 , 1072-G03-18
Copyright
Copyright © Materials Research Society 2008

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References

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