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Thermal Expansion Behavior of ZnSe and ZnS0.03Se0.97 Epilayers on GaAs at Temperatures in the Range, 25°C - 250°C

Published online by Cambridge University Press:  22 February 2011

J. R. Kim ,
R. M. Park  and
K. S. Jones
J. R. Kim
Affiliation:
Dept. of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
R. M. Park
Affiliation:
Dept. of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
K. S. Jones
Affiliation:
Dept. of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
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Abstract

The thermal expansion behavior of ZnSe and ZnS0.03Se0.97 epilayers grown on GaAs has been investigated using high resolution X-ray diffraction at temperatures between room temperature and the growth temperature. The lattice parameters perpendicular and parallel to the surface were measured with the Bond's method. The lattice mismatch for a partially relaxed ZnSe layer was Δa(⊥)/a =2300 ppm and Δa(‖)/a = 2600 ppm at room temperature(R.T.) and Δa (⊥)/a =3600 ppm and Δa(‖)/a =2400 ppm at 250°C. For ZnS0.03Se0.97 which is almost lattice matched at R.T. to GaAs, Δa(⊥)/a =200 ppm, Δa(⊥)/a =20ppmatR.T. and Δa(⊥)/a =1400ppm, Δa(⊥)/a =50ppm at 250°C. The relaxed lattice constants were evaluated and the thermal expansion coefficients of relaxed ZnSe layers were found to vary from 7.8*10−6/°C at room temperature to 12.2*10−6/°C at 250°C and for ZnS0.03Se0.97 layers the variation was from 7.5*10−6/°C at R.T. to 11.7*10−6/°C at 250°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 475
Copyright
Copyright © Materials Research Society 1994

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References

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